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A continuum theory of deformable, semiconducting ferroelectrics

Xiao, Yu and Bhattacharya, Kaushik (2008) A continuum theory of deformable, semiconducting ferroelectrics. Archive for Rational Mechanics and Analysis, 189 (1). pp. 59-95. ISSN 0003-9527. http://resolver.caltech.edu/CaltechAUTHORS:20131009-085950220

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Abstract

Ferroelectric solids, especially ferroelectric perovskites, are widely used as sensors, actuators, filters, memory devices, and optical components. While these have traditionally been treated as insulators, they are in reality wide-band-gap semiconductors. This semiconducting behavior affects the microstructures or domain patterns of the ferroelectric material and the interaction of ferroelectrics with electrodes, and is affected significantly by defects and dopants. In this paper, we develop a continuum theory of deformable, semiconducting ferroelectrics. A key idea is to introduce space charges and dopant density as field (state) variables in addition to polarization and deformation. We demonstrate the theory by studying oxygen vacancies in barium titanate. We find the formation of depletion layers, regions of depleted electrons, and a large electric field at the ferroelectric–electrode boundary. We also find the formation of a charge double layer and a large electric field across 90° domain walls but not across 180° domain walls. We show that these internal electric fields can give rise to a redistribution or forced diffusion of oxygen vacancies, which provides a mechanism for aging of ferroelectric materials.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1007/s00205-007-0096-yDOIArticle
http://link.springer.com/article/10.1007%2Fs00205-007-0096-yPublisherArticle
ORCID:
AuthorORCID
Bhattacharya, Kaushik0000-0003-2908-5469
Additional Information:© 2008 Springer-Verlag. Received August 14, 2006; Revised July 31, 2007; Accepted August 3, 2007; Published online April 29, 2008. This work draws from the doctoral thesis of Yu Xiao at the California Institute of Technology. We thank Vivek Shenoy and Wei Zhang for useful discussions. We are also glad to acknowledge the financial support of the US Army Research Office through the MURI grant no. DAAD 19-01-1-0517.
Funders:
Funding AgencyGrant Number
Army Research Office (ARO)DAAD 19-01-1-0517
Record Number:CaltechAUTHORS:20131009-085950220
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20131009-085950220
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:41784
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:09 Oct 2013 16:45
Last Modified:25 Aug 2015 21:43

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