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Phase Stability and Defect Physics of a Ternary ZnSnN_2 Semiconductor: First Principles Insights

Chen, Shiyou and Narang, Prineha and Atwater, Harry A. and Wang, Lin-Wang (2014) Phase Stability and Defect Physics of a Ternary ZnSnN_2 Semiconductor: First Principles Insights. Advanced Materials, 26 (2). pp. 311-315. ISSN 0935-9648. doi:10.1002/adma.201302727.

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Direct bandgap, earth abundant semiconductors with Eg around 1.5 eV are essential for both photovoltaic and solar to fuel (photocatalytic) energy conversion. Among the conventional semiconductors, such as element Si and Ge, binary III-V (III = B, Al, Ga, In; V = N, P, As, Sb) and II-VI (II = Zn, Cd; VI = O, S, Se, Te), only a limited number of candidates have suitable bandgaps in the range 1.0–2.0 eV. This motivates the search for earth-abundant alternatives to current semiconductors for efficient, high-quality optoelectronic devices, photovoltaics and photocatalytic energy conversion. One methodology for the search is to study ternary and multi-ternary semiconductors with more elements and more flexible optoelectronic properties.

Item Type:Article
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URLURL TypeDescription
Narang, Prineha0000-0003-3956-4594
Atwater, Harry A.0000-0001-9435-0201
Additional Information:© 2013 WILEY-VCH Verlag. Received: June 14, 2013 Revised: July 24, 2013 Published online: October 8, 2013 This material is based upon work performed by the Joint Center for Artificial Photosynthesis, a DOE Energy Innovation Hub, supported through the Office of Science of the U.S. Department of Energy under Award Number DE-SC0004993. Prineha Narang is supported by the National Science Foundation Graduate Research Fellowship and the Resnick Sustainability Institute.
Group:Resnick Sustainability Institute, JCAP
Funding AgencyGrant Number
Department of Energy (DOE)DE-SC0004993
Resnick Sustainability InstituteUNSPECIFIED
NSF Graduate Research FellowshipUNSPECIFIED
Issue or Number:2
Record Number:CaltechAUTHORS:20131009-164328252
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Official Citation:Chen, S., Narang, P., Atwater, H. A. and Wang, L.-W. (2014), Phase Stability and Defect Physics of a Ternary ZnSnN2 Semiconductor: First Principles Insights. Adv. Mater., 26: 311–315. doi: 10.1002/adma.201302727
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:41845
Deposited By: Joy Painter
Deposited On:09 Oct 2013 23:56
Last Modified:10 Nov 2021 04:34

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