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Electron and phonon transport in Co-doped FeV_(0.6)Nb_(0.4)Sb half-Heusler thermoelectric materials

Fu, Chenguang and Liu, Yintu and Xie, Hanhui and Liu, Xiaohua and Zhao, Xinbing and Snyder, G. Jeffrey and Xie, Jian and Zhu, Tiejun (2013) Electron and phonon transport in Co-doped FeV_(0.6)Nb_(0.4)Sb half-Heusler thermoelectric materials. Journal of Applied Physics, 114 (13). Art. No. 134905. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:20131107-154933333

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Abstract

The electron and phonon transport characteristics of n-type Fe_(1−x) Co_x V_(0.6)Nb_(0.4)Sb half-Heusler thermoelectric compounds is analyzed. The acoustic phonon scattering is dominant in the carrier transport. The deformation potential of E_(def) = 14.1 eV and the density of state effective mass m^* ≈ 2.0 m_e are derived under a single parabolic band assumption. The band gap is calculated to be ∼0.3 eV. Electron and phonon mean free paths are estimated based on the low and high temperature measurements. The electron mean free path is higher than the phonon one above room temperature, which is consistent with the experimental result that the electron mobility decreases more than the lattice thermal conductivity by grain refinement to enhance boundary scattering. A maximum ZT value of ∼0.33 is obtained at 650 K for x = 0.015, an increase by ∼60% compared with FeVSb. The optimal doping level is found to be ∼3.0 × 10^(20) cm^(−3) at 600 K.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/ 10.1063/1.4823859DOIArticle
http://scitation.aip.org/content/aip/journal/jap/114/13/10.1063/1.4823859PublisherArticle
ORCID:
AuthorORCID
Snyder, G. Jeffrey0000-0003-1414-8682
Zhu, Tiejun0000-0002-3868-0633
Additional Information:© 2013 AIP Publishing LLC. Received 4 July 2013; accepted 16 September 2013; published online 4 October 2013. This work was supported by the National Basic Research Program of China (2013CB632503), the Nature Science Foundation of China (Grant Nos. 51171171, 51271165, and 51101139), and the Program for New Century Excellent Talents in University (NCET-12-0495).
Funders:
Funding AgencyGrant Number
Basic Research Program of China2013CB632503
Nature Science Foundation of China51171171
Nature Science Foundation of China51271165
Nature Science Foundation of China51101139
Program for New Century Excellent Talents in UniversityNCET-12-0495
Issue or Number:13
Record Number:CaltechAUTHORS:20131107-154933333
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20131107-154933333
Official Citation:Electron and phonon transport in Co-doped FeV0.6Nb0.4Sb half-Heusler thermoelectric materials Chenguang Fu, Yintu Liu, Hanhui Xie, Xiaohua Liu, Xinbing Zhao, G. Jeffrey Snyder, Jian Xie, and Tiejun Zhu Journal of Applied Physics 114, 134905 (2013); doi: 10.1063/1.4823859
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:42327
Collection:CaltechAUTHORS
Deposited By: Ruth Sustaita
Deposited On:08 Nov 2013 22:32
Last Modified:09 Mar 2020 13:19

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