CaltechAUTHORS
  A Caltech Library Service

Electrical Junction Behavior of Poly(3,4-ethylenedioxythiophene) (PEDOT) Contacts to H‑Terminated and CH_3‑Terminated p‑, n‑, and n^+‑Si(111) Surfaces

Walter, Michael G. and Liu, Xueliang and O'Leary, Leslie E. and Brunschwig, Bruce S. and Lewis, Nathan S. (2013) Electrical Junction Behavior of Poly(3,4-ethylenedioxythiophene) (PEDOT) Contacts to H‑Terminated and CH_3‑Terminated p‑, n‑, and n^+‑Si(111) Surfaces. Journal of Physical Chemistry C, 117 (28). pp. 14485-14492. ISSN 1932-7447. http://resolver.caltech.edu/CaltechAUTHORS:20131112-143252303

[img]
Preview
PDF - Supplemental Material
See Usage Policy.

260Kb

Use this Persistent URL to link to this item: http://resolver.caltech.edu/CaltechAUTHORS:20131112-143252303

Abstract

The electronic and photovoltaic properties of junctions between the conducting polymer poly(3,4-ethylenedioxythiophene) (PEDOT) and Si(111) surfaces have been investigated for a range of doping types, doping levels, and surface functionalization of the Si. PEDOT–poly(styrenesulfonate) (PSS) formed ohmic, low resistance contacts to H-terminated and CH_3-terminated p-type Si(111) surfaces. In contrast, PEDOT formed high barrier height (0.8–1.0 V) contacts to n-Si(111) surfaces, with CH_3-terminated n-Si(111)/PEDOT contacts showing slightly higher barrier heights (1.01 eV) than H-terminated n-Si(111)/PEDOT contacts (0.89 V). PEDOT contacts to CH_3-terminated and H-terminated n-Si(111) surfaces both produced photovoltages under illumination in accord with the Shockley diode limit based on bulk/recombination diffusion in the semiconductor. Such devices produced solar energy-conversion efficiencies of 5.7% under 100 mW cm^(–2) of simulated air mass 1.5 illumination. The electrical properties of PEDOT contacts to CH_3-terminated Si surfaces were significantly more stable in an air ambient than the electrical properties of PEDOT contacts to H-terminated Si surfaces. PEDOT films produced a low resistance, tunnel-barrier type of ohmic contact to n^+-Si(111) surfaces. Hence, through various combinations of doping type, doping level, and surface functionalization, the PEDOT/Si contact system offers a wide range of opportunities for integration into monolithic photovoltaic and/or artificial photosynthetic systems.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1021/jp4018162DOIArticle
http://pubs.acs.org/doi/full/10.1021/jp4018162PublisherArticle
ORCID:
AuthorORCID
Brunschwig, Bruce S.0000-0002-6135-6727
Lewis, Nathan S.0000-0001-5245-0538
Additional Information:© 2013 American Chemical Society. Received: February 20, 2013; Revised: May 6, 2013; Published: May 8, 2013. We acknowledge the National Science Foundation Grant CHE-1214152 for financial support. We acknowledge critical support and infrastructure provided for this work by the Kavli Nanoscience Institute at Caltech. M.G.W. acknowledges support from a NSF American Competitiveness in Chemistry postdoctoral fellowship (CHE-0937048). Additional information regarding the preparation and measurements of the PEDOT:PSS films and J–V data of aged electrodes. This material is available free of charge via the Internet at http://pubs.acs.org.
Group:Kavli Nanoscience Institute
Funders:
Funding AgencyGrant Number
NSFCHE-1214152
NSF Postdoctoral FellowshipCHE-0937048
Record Number:CaltechAUTHORS:20131112-143252303
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20131112-143252303
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:42400
Collection:CaltechAUTHORS
Deposited By: Robin Izon
Deposited On:13 Nov 2013 16:32
Last Modified:02 Feb 2017 21:50

Repository Staff Only: item control page