Day, Tristan and Drymiotis, Fivos and Zhang, Tiansong and Rhodes, Daniel and Shi, Xun and Chen, Lidong and Snyder, G. Jeffrey (2013) Evaluating the potential for high thermoelectric efficiency of silver selenide. Journal of Materials Chemistry C, 1 (45). pp. 7568-7573. ISSN 2050-7526. https://resolver.caltech.edu/CaltechAUTHORS:20131205-154244362
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Abstract
Measurements and modeling of electronic transport properties of n-type Ag_(2+x)Se suggest that this material could have a thermoelectric figure of merit zT greater than 1 at 300 K and above. The exceptional performance can be traced to the exceptionally high mobility, higher than other optimized thermoelectric materials. Although zT decreases at high temperature because of a transition to a phase with high carrier concentration, our model indicates that reducing the carrier concentration will lead to high thermoelectric performance at room temperature for cooling applications as well as up to 600 K for waste heat recovery.
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| Additional Information: | © The Royal Society of Chemistry. Received 12th September 2013. Accepted 11th October 2013. First published online 18 Oct 2013. The authors would like to thank the US Air Force Office of Scientific Research for supporting this work. | |||||||||
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| Issue or Number: | 45 | |||||||||
| Record Number: | CaltechAUTHORS:20131205-154244362 | |||||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20131205-154244362 | |||||||||
| Official Citation: | Evaluating the potential for high thermoelectric efficiency of silver selenide Tristan Day, Fivos Drymiotis, Tiansong Zhang, Daniel Rhodes, Xun Shi, Lidong Chen and G. Jeffrey Snyder J. Mater. Chem. C, 2013, 1, 7568-7573 DOI: 10.1039/C3TC31810A | |||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
| ID Code: | 42871 | |||||||||
| Collection: | CaltechAUTHORS | |||||||||
| Deposited By: | Ruth Sustaita | |||||||||
| Deposited On: | 05 Dec 2013 23:57 | |||||||||
| Last Modified: | 03 Oct 2019 06:02 |
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