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Bandgap Tunability in Zn(Sn,Ge)N_2 Semiconductor Alloys

Narang, Prineha and Chen, Shiyou and Coronel, Naomi C. and Gul, Sheraz and Yano, Junko and Wang, Lin-Wang and Lewis, Nathan S. and Atwater, Harry A. (2014) Bandgap Tunability in Zn(Sn,Ge)N_2 Semiconductor Alloys. Advanced Materials, 26 (8). pp. 1235-1241. ISSN 0935-9648. http://resolver.caltech.edu/CaltechAUTHORS:20131209-100236108

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Abstract

ZnSn_(1-x)Ge_xN_2 direct bandgap semiconductor alloys, with a crystal structure and electronic structure similar to InGaN, are earth-abundant alternatives for efficient, high-quality optoelectronic devices and solar energy conversion. The bandgap is tunable almost monotonically from 2 eV (ZnSnN_2) to 3.1 eV (ZnGeN_2) by control of the Sn/Ge ratio.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1002/adma.201304473DOIArticle
http://onlinelibrary.wiley.com/doi/10.1002/adma.201304473/abstractPublisherArticle
ORCID:
AuthorORCID
Narang, Prineha0000-0003-3956-4594
Yano, Junko0000-0001-6308-9071
Lewis, Nathan S.0000-0001-5245-0538
Atwater, Harry A.0000-0001-9435-0201
Additional Information:© 2013 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. Received: September 5, 2013. Article first published online: 5 Dec. 2013. This material is based upon work performed by the Joint Center for Artificial Photosynthesis, a DOE Energy Innovation Hub, supported through the Office of Science of the U.S. Department of Energy under Award Number DE-SC0004993, and was also supported by the Dow Chemical Company. P.N. acknowledges support from a National Science Foundation Graduate Research Fellowship and from the Resnick Sustainability Institute. X-ray spectroscopy work was performed at the Advanced Light Source (ALS, BL 10.3.2 and 7.0.1), Berkeley, under Contract DE-AC02–05CH11231. The authors thank Drs. Jinghua Guo and Per-Anders Glans-Suzuki for their support at BL 7.0.1.
Group:Resnick Sustainability Institute, JCAP
Funders:
Funding AgencyGrant Number
Department of Energy (DOE)DE-SC0004993
Dow Chemical CompanyUNSPECIFIED
NSF Graduate Research FellowshipUNSPECIFIED
Resnick Sustainability InstituteUNSPECIFIED
Department of Energy (DOE)DE-AC02-05CH11231
Subject Keywords:Zn(Sn,Ge)N_2 semiconductor alloys; miscibility; bandgap
Record Number:CaltechAUTHORS:20131209-100236108
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20131209-100236108
Official Citation:Narang, P., Chen, S., Coronel, N. C., Gul, S., Yano, J., Wang, L.-W., Lewis, N. S. and Atwater, H. A. (2013), Bandgap Tunability in Zn(Sn,Ge)N2 Semiconductor Alloys. Adv. Mater.. doi: 10.1002/adma.201304473
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:42895
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:11 Dec 2013 22:48
Last Modified:15 Nov 2017 00:04

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