Narang, Prineha and Chen, Shiyou and Coronel, Naomi C. and Gul, Sheraz and Yano, Junko and Wang, Lin-Wang and Lewis, Nathan S. and Atwater, Harry A. (2014) Bandgap Tunability in Zn(Sn,Ge)N_2 Semiconductor Alloys. Advanced Materials, 26 (8). pp. 1235-1241. ISSN 0935-9648. doi:10.1002/adma.201304473. https://resolver.caltech.edu/CaltechAUTHORS:20131209-100236108
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Abstract
ZnSn_(1-x)Ge_xN_2 direct bandgap semiconductor alloys, with a crystal structure and electronic structure similar to InGaN, are earth-abundant alternatives for efficient, high-quality optoelectronic devices and solar energy conversion. The bandgap is tunable almost monotonically from 2 eV (ZnSnN_2) to 3.1 eV (ZnGeN_2) by control of the Sn/Ge ratio.
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| Additional Information: | © 2013 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. Received: September 5, 2013. Article first published online: 5 Dec. 2013. This material is based upon work performed by the Joint Center for Artificial Photosynthesis, a DOE Energy Innovation Hub, supported through the Office of Science of the U.S. Department of Energy under Award Number DE-SC0004993, and was also supported by the Dow Chemical Company. P.N. acknowledges support from a National Science Foundation Graduate Research Fellowship and from the Resnick Sustainability Institute. X-ray spectroscopy work was performed at the Advanced Light Source (ALS, BL 10.3.2 and 7.0.1), Berkeley, under Contract DE-AC02–05CH11231. The authors thank Drs. Jinghua Guo and Per-Anders Glans-Suzuki for their support at BL 7.0.1. | ||||||||||||
| Group: | Resnick Sustainability Institute, JCAP | ||||||||||||
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| Subject Keywords: | Zn(Sn,Ge)N_2 semiconductor alloys; miscibility; bandgap | ||||||||||||
| Issue or Number: | 8 | ||||||||||||
| DOI: | 10.1002/adma.201304473 | ||||||||||||
| Record Number: | CaltechAUTHORS:20131209-100236108 | ||||||||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20131209-100236108 | ||||||||||||
| Official Citation: | Narang, P., Chen, S., Coronel, N. C., Gul, S., Yano, J., Wang, L.-W., Lewis, N. S. and Atwater, H. A. (2013), Bandgap Tunability in Zn(Sn,Ge)N2 Semiconductor Alloys. Adv. Mater.. doi: 10.1002/adma.201304473 | ||||||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | ||||||||||||
| ID Code: | 42895 | ||||||||||||
| Collection: | CaltechAUTHORS | ||||||||||||
| Deposited By: | Tony Diaz | ||||||||||||
| Deposited On: | 11 Dec 2013 22:48 | ||||||||||||
| Last Modified: | 10 Nov 2021 16:30 |
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