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Beneficial Contribution of Alloy Disorder to Electron and Phonon Transport in Half-Heusler Thermoelectric Materials

Xie, Hanhui and Wang, Heng and Pei, Yanzhong and Fu, Chenguang and Liu, Xiaohua and Snyder, G. Jeffrey and Zhao, Xinbing and Zhu, Tiejun (2013) Beneficial Contribution of Alloy Disorder to Electron and Phonon Transport in Half-Heusler Thermoelectric Materials. Advanced Functional Materials, 23 (41). pp. 5123-5130. ISSN 1616-301X. doi:10.1002/adfm.201300663. https://resolver.caltech.edu/CaltechAUTHORS:20140109-103313419

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Abstract

Electron and phonon transport characteristics determines the potential of thermoelectric materials for power generation or refrigeration. This work shows that, different from most of high performance thermoelectric materials with dominant acoustic phonon scattering, the promising ZrNiSn based half-Heusler thermoelectric solid solutions exhibit an alloy scattering dominated charge transport. A low deformation potential and a low alloy scattering potential are found for the solid solutions, which is beneficial to maintain a relatively high electron mobility despite of the large effective mass, and can be intrinsic favorable features contributing to the noticeably high power factors of ZrNiSn based alloys. A quantitive description of the different phonon scattering mechanisms suggests that the point defect scattering is the most important mechanism that determines the phonon transport process of the solid solutions. The present results indicate that alloying can be an effective approach for such materials systems to enhance thermoelectric figure of merit ZT by reducing phonon thermal conductivity, while minimizing the deterioration of charge mobility due to the low alloy scattering potential.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1002/adfm.201300663 DOIArticle
http://onlinelibrary.wiley.com/doi/10.1002/adfm.201300663/abstractPublisherArticle
ORCID:
AuthorORCID
Snyder, G. Jeffrey0000-0003-1414-8682
Zhu, Tiejun0000-0002-3868-0633
Additional Information:© 2013 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. Received: February 21, 2013; Revised: March 18, 2013; Published online: April 30, 2013. The authors would like to thank Prof. Jihui Yang from the University of Washington, Seattle for the valuable discussions. This work is supported by the National Basic Research Program of China (Grant No. 2013CB632503), the Nature Science Foundation of China (Grant Nos. 51171171 and 51271165), and the Program for New Century Excellent Talents in University (NCET-12-0495). Y.P. acknowledges the National Junior 1000 Plan and Shanghai Eastern Scholar program for funding supports.
Funders:
Funding AgencyGrant Number
National Basic Research Program of China2013CB632503
Nature Science Foundation of China51171171
Nature Science Foundation of China51271165
Program for New Century Excellent Talents in UniversityNCET-12-0495
National Junior 1000 PlanUNSPECIFIED
Shanghai Eastern Scholar ProgramUNSPECIFIED
Subject Keywords:thermoelectrics; charge transport; alloys; doping
Issue or Number:41
DOI:10.1002/adfm.201300663
Record Number:CaltechAUTHORS:20140109-103313419
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20140109-103313419
Official Citation:Xie, H., Wang, H., Pei, Y., Fu, C., Liu, X., Snyder, G. J., Zhao, X. and Zhu, T. (2013), Beneficial Contribution of Alloy Disorder to Electron and Phonon Transport in Half-Heusler Thermoelectric Materials. Adv. Funct. Mater., 23: 5123–5130. doi: 10.1002/adfm.201300663
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:43292
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:09 Jan 2014 22:17
Last Modified:10 Nov 2021 16:35

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