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Hybrid single quantum well InP/Si nanobeam lasers for silicon photonics

Fegadolli, William S. and Kim, Se-Heon and Postigo, Pablo Aitor and Scherer, Axel (2013) Hybrid single quantum well InP/Si nanobeam lasers for silicon photonics. Optics Letters, 38 (22). pp. 4656-4658. ISSN 0146-9592. doi:10.1364/OL.38.004656.

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We report on a hybrid InP/Si photonic crystal nanobeam laser emitting at 1578 nm with a low threshold power of ∼14.7 μW. Laser gain is provided from a single InAsP quantum well embedded in a 155 nm InP layer bonded on a standard silicon-on-insulator wafer. This miniaturized nanolaser, with an extremely small modal volume of 0.375(λ/n)^3, is a promising and efficient light source for silicon photonics.

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Additional Information:© 2013 Optical Society of America. Received August 27, 2013; revised October 7, 2013; accepted October 7, 2013; posted October 8, 2013 (Doc. ID 196423); published November 8, 2013. W. S. F., S. K., and A. S. thank the NSF CIAN ERC (Grant EEC-0812072) and Sanofi S. A. for the financial support, as well as P. A. P. thank the Spanish MICINN (Grant FA8655-12-1-2125) for financial support.
Funding AgencyGrant Number
Spanish MICINNFA8655-12-1-2125
Issue or Number:22
Classification Code:OCIS codes: (130.0130) Integrated optics; (140.0140) Lasers and laser optics; (160.5298) Photonic crystals
Record Number:CaltechAUTHORS:20140113-145946557
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Official Citation:W. Fegadolli, S. Kim, P. Postigo, and A. Scherer, "Hybrid single quantum well InP/Si nanobeam lasers for silicon photonics," Opt. Lett. 38, 4656-4658 (2013)
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:43348
Deposited By: Tony Diaz
Deposited On:15 Jan 2014 00:05
Last Modified:10 Nov 2021 16:36

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