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Multiplicative and Additive Low-Frequency Noise in Microwave Transistors

Weinreb, Sander and Schleeh, Joel (2014) Multiplicative and Additive Low-Frequency Noise in Microwave Transistors. IEEE Transactions on Microwave Theory and Techniques, 62 (1). pp. 83-91. ISSN 0018-9480.

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The additive noise (i.e., noise figure) in the 1-Hz-1-GHz range and multiplicative noise (i.e., gain fluctuations) in the 1-Hz-100-kHz range have been measured for six different types of high electron mobility transistors and two heterojunction bipolar transistors. The instrumentation enables measurement of multiplicative noise as small as 10^(-6) (1 ppm). Measurements were performed at 300 and 22 K and results are discussed with regard to transistor technology, coupling of additive and multiplicative effects, and bias circuit dependence. The results are applied to radiometers and the degradation in performance due to the gain fluctuation is presented.

Item Type:Article
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Weinreb, Sander0000-0002-9353-6204
Additional Information:© 2013 IEEE. Manuscript received June 25, 2013; revised November 02, 2013; accepted November 14, 2013. Date of publication December 13, 2013; date of current version January 06, 2014.
Subject Keywords:Gain fluctuations; high electron-mobility transistor (HEMT); noise; 1/f; radiometers; transistors
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INSPEC Accession Number13998041
Issue or Number:1
Record Number:CaltechAUTHORS:20140206-153342626
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Official Citation:Weinreb, S.; Schleeh, J., "Multiplicative and Additive Low-Frequency Noise in Microwave Transistors," Microwave Theory and Techniques, IEEE Transactions on , vol.62, no.1, pp.83,91, Jan. 2014 doi: 10.1109/TMTT.2013.2293123 URL:
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:43708
Deposited By: Tony Diaz
Deposited On:07 Feb 2014 00:49
Last Modified:08 Dec 2020 00:36

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