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Mapping Quantum Yield for (Fe−Zn−Sn−Ti)O_x Photoabsorbers Using a High Throughput Photoelectrochemical Screening System

Xiang, Chengxiang and Haber, Joel and Marcin, Martin and Mitrovic, Slobodan and Jin, Jian and Gregoire, John M. (2014) Mapping Quantum Yield for (Fe−Zn−Sn−Ti)O_x Photoabsorbers Using a High Throughput Photoelectrochemical Screening System. ACS Combinatorial Science, 16 (3). pp. 120-127. ISSN 2156-8952.

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Combinatorial synthesis and screening of light absorbers are critical to material discoveries for photovoltaic and photoelectrochemical applications. One of the most effective ways to evaluate the energy-conversion properties of a semiconducting light absorber is to form an asymmetric junction and investigate the photogeneration, transport and recombination processes at the semiconductor interface. This standard photoelectrochemical measurement is readily made on a semiconductor sample with a back-side metallic contact (working electrode) and front-side solution contact. In a typical combinatorial material library, each sample shares a common back contact, requiring novel instrumentation to provide spatially resolved and thus sample-resolved measurements. We developed a multiplexing counter electrode with a thin layer assembly, in which a rectifying semiconductor/liquid junction was formed and the short-circuit photocurrent was measured under chopped illumination for each sample in a material library. The multiplexing counter electrode assembly demonstrated a photocurrent sensitivity of sub-10 μA cm^(–2) with an external quantum yield sensitivity of 0.5% for each semiconductor sample under a monochromatic ultraviolet illumination source. The combination of cell architecture and multiplexing allows high-throughput modes of operation, including both fast-serial and parallel measurements. To demonstrate the performance of the instrument, the external quantum yields of 1819 different compositions from a pseudoquaternary metal oxide library, (Fe–Zn–Sn–Ti)O_x, at 385 nm were collected in scanning serial mode with a throughput of as fast as 1 s per sample. Preliminary screening results identified a promising ternary composition region centered at Fe_(0.894)Sn_(0.103)Ti_(0.0034)O_x, with an external quantum yield of 6.7% at 385 nm.

Item Type:Article
Related URLs:
URLURL TypeDescription
Xiang, Chengxiang0000-0002-1698-6754
Haber, Joel0000-0001-7847-5506
Mitrovic, Slobodan0000-0001-8913-8505
Gregoire, John M.0000-0002-2863-5265
Additional Information:© 2014 American Chemical Society. Received: June 21, 2013. Revised: October 8, 2013. Publication Date (Web): January 28, 2014. This material is based upon work performed by the Joint Center for Artificial Photosynthesis, a DOE Energy Innovation Hub, supported through the Office of Science of the U.S. Department of Energy under Award Number DE-SC000499. We gratefully acknowledge critical support and infrastructure provided for this work by the Kavli Nanoscience Institute at Caltech.
Group:Kavli Nanoscience Institute, JCAP
Funding AgencyGrant Number
Department of Energy (DOE)DE-SC000499
Kavli Nanoscience InstituteUNSPECIFIED
Subject Keywords:photoelectrochemistry, metal oxides, semiconductor liquid junction, quantum yield
Issue or Number:3
Record Number:CaltechAUTHORS:20140218-144233923
Persistent URL:
Official Citation:Mapping Quantum Yield for (Fe–Zn–Sn–Ti)Ox Photoabsorbers Using a High Throughput Photoelectrochemical Screening System Chengxiang Xiang, Joel Haber, Martin Marcin, Slobodan Mitrovic, Jian Jin, and John M. Gregoire ACS Combinatorial Science 2014 16 (3), 120-127
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:43857
Deposited By: Ruth Sustaita
Deposited On:18 Feb 2014 23:09
Last Modified:09 Mar 2020 13:19

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