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Semiconductors as Electrooptic Modulators for Infrared Radiation

Yariv, A. and Mead, C. A. (1966) Semiconductors as Electrooptic Modulators for Infrared Radiation. IEEE Journal of Quantum Electronics, 2 (4). p. 124. ISSN 0018-9197. doi:10.1109/JQE.1966.1073840.

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The electrooptic properties of a number of semiconductors were investigated. We were particularly interested in the possibility of using these materials for modulation of infrared radiation (λ > 3µ), since many of the efficient modulation materials for the shorter wavelengths, such as KTN and KDP, are opaque in this region.

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Additional Information:© 1966 IEEE. This work was supported by the U. S. Air Force through Contract AF33(615)-2800 and by the Office of Naval Research through Contracts Nonr 220(50) and Nonr 220(42).
Funding AgencyGrant Number
U. S. Air ForceAF33(615)-2800
Office of Naval Research (ONR)Nonr 220(50)
Office of Naval Research (ONR)Nonr 220(42)
Issue or Number:4
Record Number:CaltechAUTHORS:20140226-151844706
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Official Citation:Yariv, A.; Mead, C., "Semiconductors as electrooptic modulators for infrared radiation," Quantum Electronics, IEEE Journal of , vol.2, no.4, pp.124,124, April 1966 doi: 10.1109/JQE.1966.1073840 URL:
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:44025
Deposited By: Tony Diaz
Deposited On:26 Mar 2014 21:44
Last Modified:10 Nov 2021 16:46

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