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Materials for light-induced water splitting: In situ controlled surface preparation of GaPN epilayers grown lattice-matched on Si(100)

Supplie, Oliver and May, Matthias M. and Stange, Helena and Höhn, Christian and Lewerenz, Hans-Joachim and Hannappel, Thomas (2014) Materials for light-induced water splitting: In situ controlled surface preparation of GaPN epilayers grown lattice-matched on Si(100). Journal of Applied Physics, 116 (11). Art. No. 113509. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:20140508-113013593

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Abstract

Energy storage is a key challenge in solar-driven renewable energy conversion. We promote a photochemical diode based on dilute nitride GaPN grown lattice-matched on Si(100), which could reach both high photovoltaic efficiencies and evolve hydrogen directly without external bias. Homoepitaxial GaP(100) surface preparation was shown to have a significant impact on the semiconductor-water interface formation. Here, we grow a thin, pseudomorphic GaP nucleation buffer on almost single-domain Si(100) prior to GaPN growth and compare the GaP_(0.98)N_(0.02)/Si(100) surface preparation to established P- and Ga-rich surfaces of GaP/Si(100). We apply reflection anisotropy spectroscopy to study the surface preparation of GaP_(0.98)N_(0.02) in situ in vapor phase epitaxy ambient and benchmark the signals to low energy electron diffraction, photoelectron spectroscopy, and x-ray diffraction. While the preparation of the Ga-rich surface is hardly influenced by the presence of the nitrogen precursor 1,1-dimethylhydrazine (UDMH), we find that stabilization with UDMH after growth hinders well-defined formation of the V-rich GaP_(0.98)N_(0.02)/Si(100) surface. Additional features in the reflection anisotropy spectra are suggested to be related to nitrogen incorporation in the GaP bulk.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1063/1.4869121DOIArticle
http://scitation.aip.org/content/aip/journal/jap/115/11/10.1063/1.4869121PublisherArticle
ORCID:
AuthorORCID
Supplie, Oliver0000-0002-2424-7118
May, Matthias M.0000-0002-1252-806X
Höhn, Christian0000-0002-2043-598X
Lewerenz, Hans-Joachim0000-0001-8433-9471
Hannappel, Thomas0000-0002-6307-9831
Additional Information:© 2014 AIP Publishing LLC. Received 18 December 2013; accepted 8 March 2014; published online 20 March 2014. The authors would like to thank M. Schmidtbauer, L. Spieß, and K. Tonisch for advice regarding the XRD analysis as well as H. Döscher for discussions regarding the band alignment. This work was supported by the BMBF (Project No. 03SF0404A) and DFG (Project No. HA3096). M. M. May and H. Stange acknowledge scholarships of the Studienstiftung des deutschen Volkes e.V. This material is based upon work performed by the Joint Center for Artificial Photosynthesis, a DOE Energy Innovation Hub, as follows: parts of the organization of the work, of the discussion as well as of the manuscript wording and composition were supported through the Office of Science of the US Department of Energy under Award No. DE-SC0004993.
Group:JCAP
Funders:
Funding AgencyGrant Number
Bundesministerium für Bildung und Forschung (BMBF)03SF0404A
Deutsche Forschungsgemeinschaft (DFG)HA3096
Studienstiftung des deutschen VolkesUNSPECIFIED
Department of Energy (DOE)DE-SC0004993
Issue or Number:11
Record Number:CaltechAUTHORS:20140508-113013593
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20140508-113013593
Official Citation:Materials for light-induced water splitting: In situ controlled surface preparation of GaPN epilayers grown lattice-matched on Si(100) Oliver Supplie, Matthias M. May, Helena Stange, Christian Höhn, Hans-Joachim Lewerenz and Thomas Hannappel J. Appl. Phys. 115, 113509 (2014); http://dx.doi.org/10.1063/1.4869121
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:45607
Collection:CaltechAUTHORS
Deposited By: Ruth Sustaita
Deposited On:08 May 2014 19:24
Last Modified:08 Oct 2019 22:11

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