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Propagation dynamics of individual domain walls in Ga1–xMnxAs microdevices

Tang, H. X. and Kawakami, R. K. and Awschalom, D. D. and Roukes, M. L. (2006) Propagation dynamics of individual domain walls in Ga1–xMnxAs microdevices. Physical Review B, 74 (4). Art. No. 041310(R). ISSN 1098-0121. doi:10.1103/PhysRevB.74.041310.

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We investigated the transport dynamics of individual magnetic domain walls by employing electrical measurements in multiterminal Ga1–xMnxAs microdevices. Domain wall propagation velocities were deduced from time-of-flight planar Hall measurements between multiple electrical probes of our samples. Domain wall motion induced by both magnetic field and electric currents was systematically investigated. Dependent on the strength of applied in-plane magnetic field, two regimes of domain wall motion, involving thermally assisted flow for low fields and viscous flow for high fields, have been identified. However our data shows no evidence of spin-current induced domain wall motion.

Item Type:Article
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Roukes, M. L.0000-0002-2916-6026
Additional Information:© 2006 The American Physical Society (Received 3 May 2006; revised 20 June 2006; published 31 July 2006) We acknowledge support from DARPA under grants DSO/SPINS MDA 972-01-1-0024 (Caltech) and DARPA/ONR N00014-99-1-1096 (UCSB), and from the AFOSR under grant F49620-99-1-0033 (UCSB)
Funding AgencyGrant Number
Defense Advanced Research Projects Agency (DARPA)MDA 972-01-1-0024
Office of Naval Research (ONR)N00014-99-1-1096
Air Force Office of Scientific Research (AFOSR)F49620-99-1-0033
Subject Keywords:gallium compounds; manganese compounds; semimagnetic semiconductors; ferromagnetic materials; semiconductor devices; magnetic domain walls; Hall effect
Issue or Number:4
Record Number:CaltechAUTHORS:TANprb06
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:4587
Deposited By: Archive Administrator
Deposited On:29 Aug 2006
Last Modified:08 Nov 2021 20:18

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