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Surface evolution during crystalline silicon film growth by low-temperature hot-wire chemical vapor deposition on silicon substrates

Richardson, Christine Esber and Park, Young-Bae and Atwater, Harry A. (2006) Surface evolution during crystalline silicon film growth by low-temperature hot-wire chemical vapor deposition on silicon substrates. Physical Review B, 73 (24). Art. No. 245328. ISSN 1098-0121. http://resolver.caltech.edu/CaltechAUTHORS:RICprb06

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Abstract

We investigate the low-temperature growth of crystalline thin silicon films: epitaxial, twinned, and polycrystalline, by hot-wire chemical vapor deposition (HWCVD). Using Raman spectroscopy, spectroscopic ellipsometry, and atomic force microscopy, we find the relationship between surface roughness evolution and (i) the substrate temperature (230–350 °C) and (ii) the hydrogen dilution ratio (H2/SiH4=0–480). The absolute silicon film thickness for fully crystalline films is found to be the most important parameter in determining surface roughness, hydrogen being the second most important. Higher hydrogen dilution increases the surface roughness as expected. However, surface roughness increases with increasing substrate-temperature, in contrast to previous studies of crystalline Si growth. We suggest that the temperature-dependent roughness evolution is due to the role of hydrogen during the HWCVD process, which in this high hydrogen dilution regime allows for epitaxial growth on the rms roughest films through a kinetic growth regime of shadow-dominated etch and desorption and redeposition of growth species.


Item Type:Article
ORCID:
AuthorORCID
Atwater, Harry A.0000-0001-9435-0201
Additional Information:© 2006 The American Physical Society (Received 2 November 2005; published 23 June 2006) The authors would like to thank Melissa Griggs for the height-height correlation function code and Liz Miura for Raman measurements. We also thank BP Solar and the National Renewable Energy Laboratory for their support of this project, and C.E.R. would like to thank Corning Inc. through the NPSC for their financial support.
Funders:
Funding AgencyGrant Number
BP SolarUNSPECIFIED
National Renewable Energy LaboratoryUNSPECIFIED
Corning Inc.UNSPECIFIED
Subject Keywords:surface roughness; silicon; elemental semiconductors; semiconductor growth; chemical vapour deposition; vapour phase epitaxial growth; semiconductor epitaxial layers; twinning; Raman spectra; atomic force microscopy; desorption
Issue or Number:24
Record Number:CaltechAUTHORS:RICprb06
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:RICprb06
Alternative URL:http://dx.doi.org/10.1103/PhysRevB.73.245328
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:4612
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:30 Aug 2006
Last Modified:27 Sep 2017 16:52

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