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Growth Mechanism and Electronic Structure of Zn_3P_2 on the Ga-Rich GaAs(001) Surface

Jeon, Seokmin and Bosco, Jeffrey P. and Wilson, Samantha S. and Rozeveld, Steve J. and Kim, Hyungjun and Atwater, Harry A. (2014) Growth Mechanism and Electronic Structure of Zn_3P_2 on the Ga-Rich GaAs(001) Surface. Journal of Physical Chemistry C, 118 (24). pp. 12717-12726. ISSN 1932-7447. doi:10.1021/jp4127804.

PDF (Au 4f core-level spectrum, HRXRD scans, TEM images, and calculated energy band diagrams of interfaces between Zn3P2 and GaAs(001). Calculation details of surface formation energies of P-replaced GaAs(001)-β2(2 × 4) structures) - Supplemental Material
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The growth of epitaxial Zn_3P_2 films on III–V substrates unlocks a promising pathway toward high-efficiency, earth-abundant photovoltaic devices fabricated on reusable, single-crystal templates. The detailed chemical, structural, and electronic properties of the surface and interface of pseudomorphic Zn_3P_2 epilayers grown on GaAs(001) were investigated using scanning tunneling microscopy/spectroscopy and high-resolution X-ray photoelectron spectroscopy. Two interesting features of the growth process were observed: (1) vapor-phase P4 first reacts with the Ga-rich GaAs surface to form an interfacial GaP layer with a thickness of several monolayers, and (2) a P-rich amorphous overlayer is present during the entire film growth process, beneath which a highly ordered Zn_3P_2 crystalline phase is precipitated. These features were corroborated by transmission electron micrographs of the Zn_3P_2/GaAs interface as well as density functional theory calculations of P reactions with the GaAs surface. Finally, the valence-band offset between the crystalline Zn_3P_2 epilayer and the GaAs substrate was determined to be ΔE_V = 1.0 ± 0.1 eV, indicating the formation of a hole-depletion layer at the substrate surface which may inhibit formation of an ohmic contact.

Item Type:Article
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URLURL TypeDescription Information
Jeon, Seokmin0000-0002-1230-906X
Kim, Hyungjun0000-0001-8261-9381
Atwater, Harry A.0000-0001-9435-0201
Alternate Title:Growth Mechanism and Electronic Structure of Zn3P2 on the Ga-Rich GaAs(001) Surface
Additional Information:© 2014 American Chemical Society. Received: December 30, 2013; Revised: May 6, 2014. Publication Date (Web): May 16, 2014. This work was supported by Dow Chemical Company and by the Department of Energy. S.J. thanks to Kwanjeong Educational Foundation for support. H.K. acknowledges the support by the Global Frontier R&D Program (2013-073298) on Center for Hybrid Interface Materials (HIM) funded by the Ministry of Science, ICT & Future Planning. XPS measurement was carried out in the Molecular Materials Research Center of the Beckman Institute of Caltech.
Funding AgencyGrant Number
Dow Chemical CompanyUNSPECIFIED
Department of Energy (DOE)UNSPECIFIED
Kwanjeong Educational FoundationUNSPECIFIED
Ministry of Science, ICT and Future Planning (Korea)2013-073298
Issue or Number:24
Record Number:CaltechAUTHORS:20140610-124745552
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Official Citation:Growth Mechanism and Electronic Structure of Zn3P2 on the Ga-Rich GaAs(001) Surface Seokmin Jeon, Jeffrey P. Bosco, Samantha S. Wilson, Steve J. Rozeveld, Hyungjun Kim, and Harry A. Atwater The Journal of Physical Chemistry C 2014 118 (24), 12717-12726
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:46179
Deposited By: Tony Diaz
Deposited On:10 Jun 2014 20:37
Last Modified:10 Nov 2021 17:22

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