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Domain Wall Displacement is the Origin of Superior Permittivity and Piezoelectricity in BaTiO_3 at Intermediate Grain Sizes

Ghosh, Dipankar and Sakata, Akito and Carter, Jared and Thomas, Pam A. and Han, Hyuksu and Nino, Juan C. and Jones, Jacob L. (2014) Domain Wall Displacement is the Origin of Superior Permittivity and Piezoelectricity in BaTiO_3 at Intermediate Grain Sizes. Advanced Functional Materials, 24 (7). pp. 885-896. ISSN 1616-301X. http://resolver.caltech.edu/CaltechAUTHORS:20140610-134008477

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Abstract

The dielectric and piezoelectric properties of ferroelectric polycrystalline materials have long been known to be strong functions of grain size and extrinsic effects such as domain wall motion. In BaTiO_3, for example, it has been observed for several decades that the piezoelectric and dielectric properties are maximized at intermediate grain sizes (≈1 μm) and different theoretical models have been introduced to describe the physical origin of this effect. Here, using in situ, high-energy X-ray diffraction during application of electric fields, it is shown that 90° domain wall motion during both strong (above coercive) and weak (below coercive) electric fields is greatest at these intermediate grain sizes, correlating with the enhanced permittivity and piezoelectric properties observed in BaTiO_3. This result validates the long-standing theory in attributing the size effects in polycrystalline BaTiO_3 to domain wall displacement. It is now empirically established that a doubling or more in the piezoelectric and dielectric properties of polycrystalline ferroelectric materials can be achieved through domain wall displacement effects; such mechanisms are suggested for use in the design of new ferroelectric materials with enhanced properties.


Item Type:Article
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URLURL TypeDescription
http://onlinelibrary.wiley.com/doi/10.1002/adfm.201301913/abstractPublisherArticle
http://dx.doi.org/10.1002/adfm.201301913DOIArticle
http://onlinelibrary.wiley.com/doi/10.1002/adfm.201301913/suppinfoPublisherSupporting Information
Alternate Title:Domain Wall Displacement is the Origin of Superior Permittivity and Piezoelectricity in BaTiO3 at Intermediate Grain Sizes
Additional Information:© 2013 Wiley-VCH Verlag GmbH & Co. Article first published online: 3 Sep 2013. Received: June 5, 2013. Revised: July 16, 2013. This work was partially supported by the U.S. Department of the Army under contract number W911NF-09-1-0435, the U.S. National Science Foundation under award number DMR-0746902, and the Florida Cluster for Advanced Smart Sensor Technologies (FCASST) under “New Florida 2010”. Use of the Advanced Photon Source was supported by the U. S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357. The authors gratefully acknowledge the help of Dr. Yang Ren and Dr. Guy Jennings at beamline 11-ID-C at the Advanced Photon Source and Prof. Ghatu Subhash for access to the SPS facilities. Also the authors acknowledge Dr. Shruti Banavara Seshadri and Dr. Goknur Tutunchu for help with in situ X-ray measurements and for helpful discussion.
Funders:
Funding AgencyGrant Number
Army Research Office (ARO)W911NF-09-1-0435
NSFDMR-0746902
Florida Cluster for Advanced Smart Sensor Technologies (FCASST)New Florida 2010
Department of Energy (DOE)DE-AC02-06CH11357
Subject Keywords:barium titanate; grain size; permittivity; in situ X-ray diffraction; domain wall motion
Record Number:CaltechAUTHORS:20140610-134008477
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20140610-134008477
Official Citation:Ghosh, D., Sakata, A., Carter, J., Thomas, P. A., Han, H., Nino, J. C. and Jones, J. L. (2014), Domain Wall Displacement is the Origin of Superior Permittivity and Piezoelectricity in BaTiO3 at Intermediate Grain Sizes. Adv. Funct. Mater., 24: 885–896. doi: 10.1002/adfm.201301913
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:46182
Collection:CaltechAUTHORS
Deposited By: Ruth Sustaita
Deposited On:10 Jun 2014 21:41
Last Modified:14 Nov 2017 23:51

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