Ratto, Joseph J. and Porter, John R. and Housley, Robert M. and Morgan, Peter E. D. (1990) Monitoring Sintering / Densification and Crystallization / Grain-Growth in Tl-Based High Temperature Superconductors by Electrical Conductivity Measurements. Japanese Journal of Applied Physics, 29 (2). pp. 244-251. ISSN 0021-4922. https://resolver.caltech.edu/CaltechAUTHORS:20140611-082324941
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Abstract
An "in situ" electrical resistance method has been used to monitor sintering to best achieve a high percentage of Tl-2223 structure. By this means, the sequential formation of syntactic intergrowths, 2201, 2212 and 2223 structures, was followed as a function of temperature, time, seeding and gaseous atmosphere. At 895°C, slight melting assists the formation of ~95% pure 2223; the presence of carbonate is probably deleterious.
| Item Type: | Article | |||||||||
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| Additional Information: | © 1990 IOP Publishing. Received September 26, 1989; accepted for publication November 18, 1989. This work was supported by Rockwell International Independent Research and Development Fund. | |||||||||
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| Subject Keywords: | high temperature superconductor, TI-Ba-Ca-Cu-O, sintering, electrical resistance method, four point probe method, grain-growth, syntactic, intergrowths, Tl-2201, Tl-2212, Tl-2223 | |||||||||
| Issue or Number: | 2 | |||||||||
| Record Number: | CaltechAUTHORS:20140611-082324941 | |||||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20140611-082324941 | |||||||||
| Official Citation: | Monitoring Sintering / Densification and Crystallization / Grain-Growth in Tl-Based High Temperature Superconductors by Electrical Conductivity Measurements Joseph J. Ratto et al 1990 Jpn. J. Appl. Phys. 29 244 | |||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
| ID Code: | 46194 | |||||||||
| Collection: | CaltechAUTHORS | |||||||||
| Deposited By: | Tony Diaz | |||||||||
| Deposited On: | 11 Jun 2014 16:30 | |||||||||
| Last Modified: | 03 Oct 2019 06:42 |
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