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Formation of Low Threshold Voltage Microlasers

Scherer, A. and Jewell, J. L. and Walther, M. and Harbison, J. P. and Florez, L. T. (1992) Formation of Low Threshold Voltage Microlasers. Electronics Letters, 28 (13). pp. 1224-1226. ISSN 0013-5194.

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Vertical cavity surface emitting lasers (VCSELs) with threshold voltages of 1.7V have been fabricated. The resistance-area product in these new vertical cavity lasers is comparable to that of edge-emitting lasers, and threshold currents as low as 3 mA have been measured. Molecular beam epitaxy was used to grow n-type mirrors, a quantum well active region, and a heavily Be-doped p-contact. After contact definition and alloying, passive high-reflectivity mirrors were deposited by reactive sputter deposition of SiO2/Si3N4 to complete the laser cavity.

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Additional Information:©1992 IEE. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEE. The authors wish to thank E. Kapon, B. P. Van der Gaag and R. J. Martin for their assistance.
Subject Keywords:Lasers, Semiconductor lasers
Issue or Number:13
Record Number:CaltechAUTHORS:AXEel92
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:462
Deposited By: Archive Administrator
Deposited On:21 Jun 2005
Last Modified:02 Oct 2019 22:33

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