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Combined High Power and High Frequency Operation of InGaAsP/InP Lasers at 1.3μm

Chen, T. R. and Zhuang, Y. H. and Yariv, A. and Blauvelt, H. and Bar-Chaim, N. (1990) Combined High Power and High Frequency Operation of InGaAsP/InP Lasers at 1.3μm. Electronics Letters, 26 (14). pp. 985-987. ISSN 0013-5194.

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A simultaneous operation of a semiconductor laser at high power and high speed was demonstrated in a buried crescent laser on a P-InP substrate. In a cavity length of 300μm, a maximum CW power of 130mW at room temperature was obtained in a junction-up mounting configuration. A 3dB bandwidth in excess of 12GHz at an output power of 52mW was observed.

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Additional Information:©1990 IEE. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEE. The authors are grateful to D. Huff for his help in the modulation experiment. This work has been supported by the Defense Advanced Research Projects Agency and the Office of Naval Research.
Subject Keywords:Semiconductor lasers, Optical communications
Issue or Number:14
Record Number:CaltechAUTHORS:CHEel90
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:465
Deposited By: Archive Administrator
Deposited On:21 Jun 2005
Last Modified:02 Oct 2019 22:33

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