Parallel fabrication and single-electron charging of devices based on ordered, two-dimensional phases of organically functionalized metal nanocrystals

Markovich, Gil and Leff, Daniel V. and Chung, Sung-Wook and Soyez, Hermes M. and Dunn, Bruce and Heath, James R. (1997) Parallel fabrication and single-electron charging of devices based on ordered, two-dimensional phases of organically functionalized metal nanocrystals. Applied Physics Letters, 70 (23). pp. 3107-3109. ISSN 0003-6951. doi:10.1063/1.119105. https://resolver.caltech.edu/CaltechAUTHORS:MARapl97

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Abstract

A parallel technique for fabricating single-electron, solid-state capacitance devices from ordered, two-dimensional closest-packed phases of organically functionalized metal nanocrystals is presented. The nanocrystal phases were prepared as Langmuir monolayers and subsequently transferred onto Al-electrode patterned glass substrates for device construction. Alternating current impedance measurements were carried out to probe the single-electron charging characteristics of the devices under both ambient and 77 K conditions. Evidence of a Coulomb blockade and step structure reminiscent of a Coulomb staircase is presented.

Item Type:

Article

Related URLs:

URL	URL Type	Description
https://doi.org/10.1063/1.119105	DOI	UNSPECIFIED

ORCID:

Author	ORCID
Dunn, Bruce	0000-0001-5669-4740
Heath, James R.	0000-0001-5356-4385

Additional Information:

© 1997 American Institute of Physics. Received 3 January 1997; accepted 9 April 1997. This work was supported by the Office of Naval Research, Order No. N00014-95-F0099 and by the Director, Office of Energy Research, Office of Basic Energy Research, Division of Materials Sciences of the U.S. Department of Energy under Contract No. DE-AC03-76SF00098, and by the NSF-NYI Program. One author (J.R.H.) acknowledges support from the David and Lucile Packard Foundation, and a Dreyfus fellowship. A second author (G.M.) acknowledges support from the Fulbright Program. Two authors (B.D. and H.M.S.) acknowledge funding from the NSF (DMR-9408780).

Funders:

Funding Agency	Grant Number
Office of Naval Research (ONR)	N00014-95-F0099
Department of Energy (DOE)	DE-AC03-76SF00098
NSF	DMR-9408780
David and Lucile Packard Foundation	UNSPECIFIED
Caltech	UNSPECIFIED
Fulbright Foundation	UNSPECIFIED

Subject Keywords:

SILVER; THIN FILMS; TUNNEL EFFECT; CAPACITANCE; GRANULAR MATERIALS; COULOMB FIELD; GRAIN SIZE

Issue or Number:

DOI:

10.1063/1.119105

Record Number:

CaltechAUTHORS:MARapl97

Persistent URL:

https://resolver.caltech.edu/CaltechAUTHORS:MARapl97

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No commercial reproduction, distribution, display or performance rights in this work are provided.

ID Code:

4652

Collection:

CaltechAUTHORS

Deposited By:

Tony Diaz

Deposited On:

01 Sep 2006

Last Modified:

08 Nov 2021 20:18

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