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Characterization Of Large-Area Silicon Ionization Detectors For The ACE Mission

Dougherty, Brian L. and Christian, Eric R. and Cummings, Alan C. and Leske, Richard A. and Mewaldt, Richard A. and Milliken, Barrett D. and von Rosenvinge, Tycho T. and Wiedenbeck, Mark E. (1996) Characterization Of Large-Area Silicon Ionization Detectors For The ACE Mission. In: Gamma-Ray and Cosmic-Ray Detectors, Techniques, and Missions. Proceedings of SPIE. No.2806. Society of Photo-optical Instrumentation Engineers (SPIE) , Bellingham, WA, pp. 188-198. ISBN 9780819421944. https://resolver.caltech.edu/CaltechAUTHORS:20140703-215930019

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Abstract

We report on extensive tests of large-area (10 cm diameter) high-purity ion-implanted silicon detectors for the solar isotope spectrometer (SIS), and lithium-drifted silicon detectors for the cosmic ray isotope spectrometer (CRIS), which are under development for launch on the advanced composition explorer (ACE) mission. Depletion and breakdown characteristics versus bias were studied, as were long-term current and noise stability in a thermally cycled vacuum. Dead-layer and total thickness maps were obtained using laser interferometry, beams of energetic argon nuclei and radioactive sources of alpha particles. Results, selection criteria, and yields are presented.


Item Type:Book Section
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1117/12.253978DOIArticle
http://spie.org/Publications/Proceedings/Paper/10.1117/12.253978PublisherArticle
ORCID:
AuthorORCID
Christian, Eric R.0000-0003-2134-3937
Cummings, Alan C.0000-0002-3840-7696
Leske, Richard A.0000-0002-0156-2414
Mewaldt, Richard A.0000-0003-2178-9111
Wiedenbeck, Mark E.0000-0002-2825-3128
Additional Information:SPIE © 1996. This research was supported by the National Aeronautics and Space Administration at the California Institute of Technology (under contract NAS5-32626 and grant NAGW-1919), the Jet Propulsion Laboratory, and the Goddard Space Flight Center. BLD is grateful for support from the National Research Council. The Si(Li) detectors were fabricated at the Lawrence Berkeley National Laboratory, and the high-purity detectors were purchased from Micron Semiconductor, Ltd. of Sussex in the United Kingdom. Special thanks go to J. Walton, Y. Wong; C. Wilburn and A. Lucas for making the$e detectors. We thank G. Allbritton, M. Madden and B. Nahory for contributions in testing detectors and in taking data at MSU, as well as the personnel at the NSCL for their support. We also thank B. Sears for aid in analyzing this data.
Group:Space Radiation Laboratory
Funders:
Funding AgencyGrant Number
NASANAS5-32626
NASANAGW-1919
JPLUNSPECIFIED
Goddard Space Flight CenterUNSPECIFIED
National Research CouncilUNSPECIFIED
Subject Keywords:large-area lithium-drifted and high-purity ion-implanted silicon ionization detectors, dead-layers
Other Numbering System:
Other Numbering System NameOther Numbering System ID
Space Radiation Laboratory1996-23
Series Name:Proceedings of SPIE
Issue or Number:2806
Record Number:CaltechAUTHORS:20140703-215930019
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20140703-215930019
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:46839
Collection:CaltechAUTHORS
Deposited By: Deborah Miles
Deposited On:23 Jul 2014 17:37
Last Modified:09 Mar 2020 13:19

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