Eng, L. E. and Mehuys, D. G. and Mittelstein, M. and Yariv, A. (1990) Broadband Tuning (170nm) of InGaAs Quantum Well Lasers. Electronics Letters, 26 (20). pp. 1675-1677. ISSN 0013-5194. https://resolver.caltech.edu/CaltechAUTHORS:ENGel90
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Abstract
The wavelength tuning properties of strained InGaAs quantum well lasers using an external grating for feedback is reported. Tunable laser oscillation has been observed over a range of 170 nm, between 840 and 1010 nm, under pulsed current excitation. The optimal conditions for broadband tunability for the InGaAs lasers are different from GaAs lasers, which is attributed to a difference in spectral gain curves. Together with an optimised GaAs quantum well laser the entire region between 740 and 1010 nm is spanned.
| Item Type: | Article |
|---|---|
| Additional Information: | ©1990 IEE. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEE. The authors would like to acknowledge the support of the Office of Naval Research, the Air Force Office of Scientific Research and the National Science Foundation. L. Eng gratefully acknowledges support from IBM through their graduate fellowship program. |
| Issue or Number: | 20 |
| Record Number: | CaltechAUTHORS:ENGel90 |
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:ENGel90 |
| Alternative URL: | http://ieeexplore.ieee.org/iel1/2220/2109/00058174.pdf |
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. |
| ID Code: | 469 |
| Collection: | CaltechAUTHORS |
| Deposited By: | Archive Administrator |
| Deposited On: | 22 Jun 2005 |
| Last Modified: | 02 Oct 2019 22:33 |
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