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Electronic states in a disordered metal: Magnetotransport in doped germanium

Rosenbaum, T. F. and Pepke, S. and Bhatt, R. N. and Ramakrishnan, T. V. (1990) Electronic states in a disordered metal: Magnetotransport in doped germanium. Physical Review B, 42 (17). pp. 11214-11217. ISSN 1098-0121. doi:10.1103/PhysRevB.42.11214.

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We observe a sharp feature in the ultra-low-temperature magnetoconductivity of degenerately doped Ge:Sb at H∼25 kOe, which is robust up to at least three times the critical density for the insulator-metal transition. This field corresponds to a low-energy scale characteristic of the special nature of antimony donors in germanium. Its presence and sensitivity to uniaxial stress confirm the notion of metallic impurity bands in doped germanium.

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Additional Information:© 1990 The American Physical Society. Received 4 June 1990. We thank H. Fritzsche for generously supplying the crystals of Ge:Sb. We are indebted to H. Krebs for his help in fabricating the stress cell. The work at The University of Chicago was supported by National Science Foundation Grant No. DMR-8816817. S.P. acknowledges support from the Materials Research Laboratory, Grant No. DMR-8819860.
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Issue or Number:17
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ID Code:47023
Deposited By: George Porter
Deposited On:09 Jul 2014 17:23
Last Modified:10 Nov 2021 17:33

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