Rosenbaum, T. F. and Pepke, S. and Bhatt, R. N. and Ramakrishnan, T. V. (1990) Electronic states in a disordered metal: Magnetotransport in doped germanium. Physical Review B, 42 (17). pp. 11214-11217. ISSN 1098-0121. https://resolver.caltech.edu/CaltechAUTHORS:20140707-163038713
|
PDF
- Published Version
See Usage Policy. 217Kb |
Use this Persistent URL to link to this item: https://resolver.caltech.edu/CaltechAUTHORS:20140707-163038713
Abstract
We observe a sharp feature in the ultra-low-temperature magnetoconductivity of degenerately doped Ge:Sb at H∼25 kOe, which is robust up to at least three times the critical density for the insulator-metal transition. This field corresponds to a low-energy scale characteristic of the special nature of antimony donors in germanium. Its presence and sensitivity to uniaxial stress confirm the notion of metallic impurity bands in doped germanium.
| Item Type: | Article | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|
| Related URLs: |
| |||||||||
| Additional Information: | © 1990 The American Physical Society. Received 4 June 1990. We thank H. Fritzsche for generously supplying the crystals of Ge:Sb. We are indebted to H. Krebs for his help in fabricating the stress cell. The work at The University of Chicago was supported by National Science Foundation Grant No. DMR-8816817. S.P. acknowledges support from the Materials Research Laboratory, Grant No. DMR-8819860. | |||||||||
| Funders: |
| |||||||||
| Issue or Number: | 17 | |||||||||
| Record Number: | CaltechAUTHORS:20140707-163038713 | |||||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20140707-163038713 | |||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
| ID Code: | 47023 | |||||||||
| Collection: | CaltechAUTHORS | |||||||||
| Deposited By: | George Porter | |||||||||
| Deposited On: | 09 Jul 2014 17:23 | |||||||||
| Last Modified: | 03 Oct 2019 06:48 |
Repository Staff Only: item control page
