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Electronic states in a disordered metal: Magnetotransport in doped germanium

Rosenbaum, T. F. and Pepke, S. and Bhatt, R. N. and Ramakrishnan, T. V. (1990) Electronic states in a disordered metal: Magnetotransport in doped germanium. Physical Review B, 42 (17). pp. 11214-11217. ISSN 1098-0121. https://resolver.caltech.edu/CaltechAUTHORS:20140707-163038713

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Abstract

We observe a sharp feature in the ultra-low-temperature magnetoconductivity of degenerately doped Ge:Sb at H∼25 kOe, which is robust up to at least three times the critical density for the insulator-metal transition. This field corresponds to a low-energy scale characteristic of the special nature of antimony donors in germanium. Its presence and sensitivity to uniaxial stress confirm the notion of metallic impurity bands in doped germanium.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1103/PhysRevB.42.11214DOIArticle
http://journals.aps.org/prb/abstract/10.1103/PhysRevB.42.11214PublisherArticle
Additional Information:© 1990 The American Physical Society. Received 4 June 1990. We thank H. Fritzsche for generously supplying the crystals of Ge:Sb. We are indebted to H. Krebs for his help in fabricating the stress cell. The work at The University of Chicago was supported by National Science Foundation Grant No. DMR-8816817. S.P. acknowledges support from the Materials Research Laboratory, Grant No. DMR-8819860.
Funders:
Funding AgencyGrant Number
NSFDMR-8816817
NSFDMR-8819860
Issue or Number:17
Record Number:CaltechAUTHORS:20140707-163038713
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20140707-163038713
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:47023
Collection:CaltechAUTHORS
Deposited By: George Porter
Deposited On:09 Jul 2014 17:23
Last Modified:03 Oct 2019 06:48

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