Rosenbaum, T. F. and Pepke, S. and Bhatt, R. N. and Ramakrishnan, T. V. (1990) Electronic states in a disordered metal: Magnetotransport in doped germanium. Physical Review B, 42 (17). pp. 11214-11217. ISSN 1098-0121. doi:10.1103/PhysRevB.42.11214. https://resolver.caltech.edu/CaltechAUTHORS:20140707-163038713
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Abstract
We observe a sharp feature in the ultra-low-temperature magnetoconductivity of degenerately doped Ge:Sb at H∼25 kOe, which is robust up to at least three times the critical density for the insulator-metal transition. This field corresponds to a low-energy scale characteristic of the special nature of antimony donors in germanium. Its presence and sensitivity to uniaxial stress confirm the notion of metallic impurity bands in doped germanium.
Item Type: | Article | |||||||||
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Additional Information: | © 1990 The American Physical Society. Received 4 June 1990. We thank H. Fritzsche for generously supplying the crystals of Ge:Sb. We are indebted to H. Krebs for his help in fabricating the stress cell. The work at The University of Chicago was supported by National Science Foundation Grant No. DMR-8816817. S.P. acknowledges support from the Materials Research Laboratory, Grant No. DMR-8819860. | |||||||||
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Issue or Number: | 17 | |||||||||
DOI: | 10.1103/PhysRevB.42.11214 | |||||||||
Record Number: | CaltechAUTHORS:20140707-163038713 | |||||||||
Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20140707-163038713 | |||||||||
Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
ID Code: | 47023 | |||||||||
Collection: | CaltechAUTHORS | |||||||||
Deposited By: | George Porter | |||||||||
Deposited On: | 09 Jul 2014 17:23 | |||||||||
Last Modified: | 10 Nov 2021 17:33 |
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