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The role of disorder in highly correlated metals and insulators

Rosenbaum, T. F. and Carter, S. A. (1990) The role of disorder in highly correlated metals and insulators. Journal of Solid State Chemistry, 88 (1). pp. 94-103. ISSN 0022-4596. doi:10.1016/0022-4596(90)90207-E.

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We present measurements of the electrical resistivity at a series of hydrostatic pressures, the ac magnetic susceptibility, and the low temperature specific heat for single crystals of titanium-doped and vanadium-deficient V_2O_3 on both sides of the metal-insulator transition. We concentrate on the experimental signatures of disorder as a way to probe both correlation and charge localization effects. Comparison is made to previous T→0 results obtained for the rare earth oxide La_(2-x)Sr_xCuO_4 and the doped semiconductor Si : P in the immediate vicinity of the transition.

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Additional Information:Copyright © 1990 Published by Elsevier Inc. Received June 1, 1990. Dedicated to J. M. Honig on the occasion of his 65th birthday. We are indebted to J. M. Honig and J. Spalek for teaching us about the intricacy and beauty of the vanadium sesquioxide system. The experimental work reported here could not have been completed without the help of J. Yang. We are also grateful to P. Metcalf for reannealing the V_2O_3 crystals used in this research. The work at The University of Chicago was supported by NSF DMR 8816817.
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NSFDMR 8816817
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Record Number:CaltechAUTHORS:20140707-163038882
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Official Citation:T.F. Rosenbaum, S.A. Carter, The role of disorder in highly correlated metals and insulators, Journal of Solid State Chemistry, Volume 88, Issue 1, September 1990, Pages 94-103, ISSN 0022-4596, (
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:47024
Deposited By: George Porter
Deposited On:08 Jul 2014 19:50
Last Modified:10 Nov 2021 17:33

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