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Measurements of conductivity near the metal-insulator critical point

Thomas, G. A. and Paalanen, M. and Rosenbaum, T. F. (1983) Measurements of conductivity near the metal-insulator critical point. Physical Review B, 27 (6). pp. 3897-3900. ISSN 1098-0121. https://resolver.caltech.edu/CaltechAUTHORS:20140707-163041508

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Abstract

We present measurements of the electrical conductivity at low temperatures of bulk samples of Si:P under uniaxial stress controlled to bring the samples within 0.1% of the metal-insulator transition. As the metal approaches the critical point, we find that the power law of the temperature correction to the conductivity predicted for weak Coulomb interactions continues to fit, but that its sign, size, and range of validity change. Its size defines a diffusion temperature which tends towards zero at the critical density, at which point the power law itself appears to change.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1103/PhysRevB.27.3897DOIArticle
http://journals.aps.org/prb/abstract/10.1103/PhysRevB.27.3897PublisherArticle
Additional Information:© 1983 The American Physical Society. Received 3 January 1983. We would like to thank R. N. Bhatt and P. A. Lee for helpful discussions.
Issue or Number:6
Record Number:CaltechAUTHORS:20140707-163041508
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20140707-163041508
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:47047
Collection:CaltechAUTHORS
Deposited By: George Porter
Deposited On:09 Jul 2014 14:50
Last Modified:03 Oct 2019 06:49

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