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Metal-insulator transition in a doped semiconductor

Rosenbaum, T. F. and Milligan, R. F. and Paalanen, M. A. and Thomas, G. A. and Bhatt, R. N. and Lin, W. (1983) Metal-insulator transition in a doped semiconductor. Physical Review B, 27 (12). pp. 7509-7523. ISSN 1098-0121. https://resolver.caltech.edu/CaltechAUTHORS:20140707-163041612

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Abstract

Millikelvin measurements of the conductivity as a function of donor density and uniaxial stress in bulk samples of phosphorus-doped silicon establish that the transition from metal to insulator is continuous, but sharper than predicted by scaling theories of localization. The divergence of the dielectric susceptibility as the transition is approached from below also points out problems in current scaling theories. The temperature dependence of the conductivity and the magnetoresistance in the metal indicate the importance of Coulomb interactions in describing the behavior of disordered systems.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1103/PhysRevB.27.7509DOIArticle
http://journals.aps.org/prb/abstract/10.1103/PhysRevB.27.7509PublisherArticle
Additional Information:© 1983 The American Physical Society. Received 3 December 1982. We would like to thank L. P. Adda for annealing a series of samples and R. E. Miller and J. B. Mock for help in sample preparation.
Issue or Number:12
Record Number:CaltechAUTHORS:20140707-163041612
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20140707-163041612
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:47048
Collection:CaltechAUTHORS
Deposited By: George Porter
Deposited On:09 Jul 2014 14:52
Last Modified:03 Oct 2019 06:49

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