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Critical Scaling of the Conductance in a Disordered Insulator

Paalanen, M. A. and Rosenbaum, T. F. and Thomas, G. A. and Bhatt, R. N. (1983) Critical Scaling of the Conductance in a Disordered Insulator. Physical Review Letters, 51 (20). pp. 1896-1899. ISSN 0031-9007. https://resolver.caltech.edu/CaltechAUTHORS:20140707-163041718

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Abstract

A critical scaling of the real and imaginary parts of the low-frequency ac conductance of insulating phosphorus-doped silicon near the metal-insulator transition has been observed. The results are interpreted as evidence of an electron glass, i.e., glasslike behavior, intimately connected with the scaling description of the transition, in which Coulomb interactions play a significant role.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1103/PhysRevLett.51.1896DOIArticle
http://journals.aps.org/prl/abstract/10.1103/PhysRevLett.51.1896PublisherArticle
Additional Information:© 1983 The American Physical Society. (Received 26 August 1983) We would like to thank P. W. Anderson, J. J. Hauser, P. A. Lee, and T. V. Ramakrishnan for helpful discussions.
Issue or Number:20
Classification Code:PACS numbers: 72.15.Cz, 71.30.+h, 72.20.Fr
Record Number:CaltechAUTHORS:20140707-163041718
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20140707-163041718
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:47049
Collection:CaltechAUTHORS
Deposited By: George Porter
Deposited On:09 Jul 2014 21:47
Last Modified:03 Oct 2019 06:49

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