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Stress Tuning of the Metal-Insulator Transition at Millikelvin Temperatures

Paalanen, M. A. and Rosenbaum, T. F. and Thomas, G. A. and Bhatt, R. N. (1982) Stress Tuning of the Metal-Insulator Transition at Millikelvin Temperatures. Physical Review Letters, 48 (18). pp. 1284-1287. ISSN 0031-9007. doi:10.1103/PhysRevLett.48.1284.

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A high-resolution scan of the metal-insulator transition in Si:P at millikelvin temperatures has been obtained by applying uniaxial stress. A sharp, but continuous, metal-insulator transition is resolved, with conductivities below Mott's "minimum" value σ_M. These measurements join smoothly with previous low-resolution experiments, ruling out any discontinuity at σ_M. The reproducible critical behavior disagrees with predictions of existing scaling theories of localization.

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Additional Information:© 1982 The American Physical Society. Received 26 February 1982. We would like to thank P. W. Anderson, E. I. Blount, D. S. Fisher, and P. A. Lee for helpful discussions and H. Dail for help with data acquisition.
Issue or Number:18
Classification Code:PACS numbers: 71.30.+h, 72.15.Cz, 72.20.Fr
Record Number:CaltechAUTHORS:20140707-163042143
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:47053
Deposited By: George Porter
Deposited On:09 Jul 2014 22:01
Last Modified:10 Nov 2021 17:34

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