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Sharp Metal-Insulator Transition in a Random Solid

Thomas, G. A. and Rosenbaum, T. F. and DeConde, K. (1981) Sharp Metal-Insulator Transition in a Random Solid. Bulletin of the American Physical Society, 26 (3). p. 411. ISSN 0003-0503. https://resolver.caltech.edu/CaltechAUTHORS:20140707-163042483

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Abstract

We have measured zero temperature metallic conductivities above and below Mott's minimum value σ_(MIN) in bulk crystals of P doped Si. Studies of lattice heating, electronic heating and macroscopic inhomogeneities support the finding that conductivities below σ_(MIN) increase by over 10 as the P density is increased by 1%, and that over a wider density range the data can be fit t o a scaling form with a characteristic length that tends to diverge with the same exponent (ν = 0.55±0.10) in the metal and insulator.


Item Type:Article
Additional Information:© 1981 American Physical Society.
Issue or Number:3
Record Number:CaltechAUTHORS:20140707-163042483
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20140707-163042483
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:47056
Collection:CaltechAUTHORS
Deposited By: George Porter
Deposited On:14 Jul 2014 15:28
Last Modified:03 Oct 2019 06:49

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