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Low-Temperature Magnetoresistance of a Disordered Metal

Rosenbaum, T. F. and Milligan, R. F. and Thomas, G. A. and Lee, P. A. and Ramakrishnan, T. V. and Bhatt, R. N. and DeConde, K. and Hesse, H. and Perry, T. (1981) Low-Temperature Magnetoresistance of a Disordered Metal. Physical Review Letters, 47 (24). pp. 1758-1761. ISSN 0031-9007. doi:10.1103/PhysRevLett.47.1758.

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A contribution to the magnetoresistance is observed at temperatures below 100 mK in bulk metallic Si: P that is unanticipated within theoretical analyses of localization. This contribution is positive, approximately independent of sample orientation, and varying roughly as the square root of the applied field. An analysis of Coulomb interactions including spin splitting is presented which, when combined with localization, describes the magnetoresistance.

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Additional Information:© 1981 The American Physical Society. Received 21 May 1981. We would like to thank J. B. Mock and P. H. Schmidt for technical assistance and A. Kawabata for helpful discussions. This work was partially supported by Grant No. DMR-79-04141 from the National Science Foundation.
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Issue or Number:24
Classification Code:PACS numbers: 72.15.Gd, 71.45.-d, 71.50.+t
Record Number:CaltechAUTHORS:20140707-163042716
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:47058
Deposited By: George Porter
Deposited On:09 Jul 2014 22:18
Last Modified:10 Nov 2021 17:34

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