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Conductivity Cusp in a Disordered Metal

Rosenbaum, T. F. and Andres, K. and Thomas, G. A. and Lee, P. A. (1981) Conductivity Cusp in a Disordered Metal. Physical Review Letters, 46 (8). pp. 568-571. ISSN 0031-9007. doi:10.1103/PhysRevLett.46.568. https://resolver.caltech.edu/CaltechAUTHORS:20140707-163042823

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Abstract

A tendency toward a cusp at zero temperature in the electrical conductivity of Si crystals doped with P is observed. It is found that, within the metallic state, decreasing P concentration enhances the cusp and then rapidly changes its sign as a pseudogap opens. Such a cusp has been predicted for a disordered metal in which Coulomb interactions dominate the scattering.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1103/PhysRevLett.46.568DOIArticle
http://journals.aps.org/prl/abstract/10.1103/PhysRevLett.46.568PublisherArticle
Additional Information:© 1981 The American Physical Society. (Received 27 October 1980) We would like to acknowledge helpful discussions with P. W. Anderson, R. N. Bhatt, E. I. Blount, and T. M. Rice, and technical assistance from Frank DeRosa.
Issue or Number:8
Classification Code:PACS numbers: 71.45.-d, 71.50.+t, 72.15.Cz
DOI:10.1103/PhysRevLett.46.568
Record Number:CaltechAUTHORS:20140707-163042823
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20140707-163042823
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:47059
Collection:CaltechAUTHORS
Deposited By: George Porter
Deposited On:09 Jul 2014 21:50
Last Modified:10 Nov 2021 17:34

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