Rosenbaum, T. F. and Andres, K. and Thomas, G. A. and Bhatt, R. N. (1980) Sharp Metal-Insulator Transition in a Random Solid. Physical Review Letters, 45 (21). pp. 1723-1726. ISSN 0031-9007. doi:10.1103/PhysRevLett.45.1723. https://resolver.caltech.edu/CaltechAUTHORS:20140707-163043149
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Abstract
Zero-temperature metallic conductivities have been measured above and below Mott's minimum value σ_(min) in bulk crystals of P-doped Si. Conductivities below σ_(min) increase by over 10^3 as the density is raised by less than 1%, and do not rule out a discontinuous transition. However, over a wider density range the data can be fitted with a scaling form with a characteristic length that tends to diverge with the same exponent in the metal and insulator.
| Item Type: | Article | |||||||||
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| Additional Information: | © 1980 The American Physical Society. Received 30 June 1980. We would like to acknowledge helpful discussions with P. W. Anderson, E. I. Blount, R. C. Dynes, D.S. Fisher, P.A. Lee, T. V. Ramakrishnan, T. M. Rice, J. M. Howell, and C. M. Varma. | |||||||||
| Issue or Number: | 21 | |||||||||
| Classification Code: | PACS numbers: 71.30.+h, 71.50.+t, 72.20.Fr | |||||||||
| DOI: | 10.1103/PhysRevLett.45.1723 | |||||||||
| Record Number: | CaltechAUTHORS:20140707-163043149 | |||||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20140707-163043149 | |||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
| ID Code: | 47062 | |||||||||
| Collection: | CaltechAUTHORS | |||||||||
| Deposited By: | George Porter | |||||||||
| Deposited On: | 09 Jul 2014 21:57 | |||||||||
| Last Modified: | 10 Nov 2021 17:34 |
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