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Anomalous Electrical Resistivity of Barely Delocalized Electrons

Rosenbaum, T. F. and Andres, K. and Thomas, G. A. and Rice, T. M. and Bhatt, R. N. (1980) Anomalous Electrical Resistivity of Barely Delocalized Electrons. Bulletin of the American Physical Society, 25 (3). p. 337. ISSN 0003-0503. https://resolver.caltech.edu/CaltechAUTHORS:20140707-163043368

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Abstract

We observe a maximum near 200 K in the zero frequency resistivity of Si:P doped et about twice the Mott density and in the dirty metal limit where the Fermi wave vector times the mean free path is of order 1 . The peak indicates a strong T-variation of the screening length, but the T-behavior down to 40 mK shows no evidence of the resistivity minimum predicted for a three-dimensional metal with interference between electron-electron and electron-impurity scattering.


Item Type:Article
Additional Information:© 1980 American Physical Society.
Issue or Number:3
Record Number:CaltechAUTHORS:20140707-163043368
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20140707-163043368
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:47064
Collection:CaltechAUTHORS
Deposited By: George Porter
Deposited On:14 Jul 2014 15:52
Last Modified:03 Oct 2019 06:49

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