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Low-temperature electrical-transport properties of single-crystal bismuth films under pressure

Lu, Mei and Zieve, R. J. and van Hulst, A. and Jaeger, H. M. and Rosenbaum, T. F. and Radelaar, S. (1996) Low-temperature electrical-transport properties of single-crystal bismuth films under pressure. Physical Review B, 53 (3). pp. 1609-1615. ISSN 1098-0121. doi:10.1103/PhysRevB.53.1609.

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We report an investigation of the low-temperature electrical transport properties of bismuth films under applied hydrostatic pressure. Films with their trigonal axis perpendicular to the film plane and thicknesses of 30, 50, and 500 nm were grown by molecular-beam epitaxy on BaF_2 substrates. At 500 nm thickness the behavior resembles that of bulk Bi. From the observed Shubnikov–de Haas oscillations we find a pressure-induced decrease in extremal Fermi cross section. For the 30-nm film, we obtain the low-temperature carrier densities for electrons and holes together with the corresponding mobilities from magnetoconductance data at pressures up to 20 kbar. We find that pressure strongly reduces the surface-induced excess hole concentration, clearly revealing a finite electron concentration at high pressures. We discuss our results within the context of a possible semimetal-semiconductor transition in thin Bi films.

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Additional Information:© 1996 The American Physical Society. Received 23 February 1995; revised manuscript received 10 May 1995. We would like to thank Ronald Griessen and Rinke Wijngaarden for helpful discussions. The work at The University of Chicago was supported in part by the MRSEC Program of the National Science Foundation under Award No. DMR-9400379. H.M.J. acknowledges support from the Alfred P. Sloan Foundation and the David and Lucile Packard Foundation. This work was also part of the research program of the ‘‘Stichting Fundamenteel Onderzoek der Materie (FOM),’’ which is financially supported by the ‘‘Nederlandse Organisatie voor Wetenschappelijk Onderzoek (NWO).’’
Funding AgencyGrant Number
Alfred P. Sloan FoundationUNSPECIFIED
David and Lucile Packard FoundationUNSPECIFIED
Stichting voor Fundamenteel Onderzoek der Materie (FOM)UNSPECIFIED
Nederlandse Organisatie voor Wetenschappelijk Onderzoek (NWO)UNSPECIFIED
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ID Code:47110
Deposited By: George Porter
Deposited On:09 Jul 2014 20:29
Last Modified:10 Nov 2021 17:34

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