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Modulation Bandwidth Enhancement in Single Quantum Well GaAs/AlGaAs Lasers

Chen, T. R. and Zhao, B. and Yamada, Y. and Zhuang, Y. H. and Yariv, A. (1992) Modulation Bandwidth Enhancement in Single Quantum Well GaAs/AlGaAs Lasers. Electronics Letters, 28 (21). pp. 1989-1991. ISSN 0013-5194.

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The state filling effect in semiconductor quantum well lasers significantly affects the modulation dynamics. The state filling effect strongly depends on the optical confining layer structure. As a direct consequence of the reduction of the state filling effect in a properly designed graded index separate confinement heterostructure, a record 3dB bandwidth in excess of 9 GHz has been obtained in uniformly pumped single quantum well GaAs/AlGaAs lasers by a careful tailoring of the device parameters.

Item Type:Article
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Zhao, B.0000-0001-8438-9188
Additional Information:© 1992 IEE. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEE. This work was supported by the Office of Naval Research, the Defense Advanced Research Project Agency and Air Force Office of Scientific Research.
Funding AgencyGrant Number
Office of Naval Research (ONR)UNSPECIFIED
Defense Advanced Research Projects Agency (DARPA)UNSPECIFIED
Air Force Office of Scientific Research (AFOSR)UNSPECIFIED
Subject Keywords:Semiconductor lasers, Lasers
Issue or Number:21
Record Number:CaltechAUTHORS:CHEel92
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:473
Deposited By: Archive Administrator
Deposited On:22 Jun 2005
Last Modified:09 Mar 2020 13:19

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