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Aspect-ratio-dependent charging in high-density plasmas

Hwang, Gyeong S. and Giapis, Konstantinos P. (1997) Aspect-ratio-dependent charging in high-density plasmas. Journal of Applied Physics, 82 (2). pp. 566-571. ISSN 0021-8979. doi:10.1063/1.365616.

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The effect of aspect ratio (depth/width) on charge buildup in trenches during plasma etching of polysilicon-on-insulator structures is studied by Monte Carlo simulations. Increased electron shadowing at larger aspect ratios reduces the electron current to the trench bottom. To reach a new charging steady state, the bottom potential must increase, significantly perturbing the local ion dynamics in the trench: the deflected ions bombard the sidewall with larger energies resulting in severe notching. The results capture reported experimental trends and reveal why the increase in aspect ratio that follows the reduction in critical device dimensions will cause more problems unless the geometry is scaled to maintain a constant aspect ratio.

Item Type:Article
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URLURL TypeDescription
Hwang, Gyeong S.0000-0002-5538-9426
Giapis, Konstantinos P.0000-0002-7393-298X
Additional Information:© 1997 American Institute of Physics (Received 18 December 1996; accepted 18 April 1997) This work was partially supported by an NSF Career Award to K.P.G. (CTS-9623450).
Funding AgencyGrant Number
Subject Keywords:PLASMA; ETCHING; SILICON; ELECTRIC CHARGES; SIMULATION; MONTE CARLO METHOD; ION DENSITY; sputter etching; elemental semiconductors; Monte Carlo methods; silicon-on-insulator
Issue or Number:2
Record Number:CaltechAUTHORS:HWAjap97b
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:4798
Deposited By: Archive Administrator
Deposited On:07 Sep 2006
Last Modified:08 Nov 2021 20:20

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