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Pattern-Dependent Charging in Plasmas: Electron Temperature Effects

Hwang, Gyeong S. and Giapis, Konstantinos P. (1997) Pattern-Dependent Charging in Plasmas: Electron Temperature Effects. Physical Review Letters, 79 (5). pp. 845-848. ISSN 0031-9007. doi:10.1103/PhysRevLett.79.845.

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The differential charging of high-aspect-ratio dense structures during plasma etching is studied by two-dimensional Monte Carlo simulations. Enhanced electron shadowing at large electron temperatures is found to reduce the electron current density to the bottom of narrow trenches, causing buildup of large charging potentials on dielectric surfaces. These potentials alter the local ion dynamics, increase the flux of deflected ions towards the sidewalls, and result in distorted profiles. The simulation results capture reported experimental trends and reveal the physics of charging damage.

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Hwang, Gyeong S.0000-0002-5538-9426
Giapis, Konstantinos P.0000-0002-7393-298X
Additional Information:© 1997 The American Physical Society Received 5 December 1996; revised 18 February 1997 This material was based upon work supported by an NSF Career Award to K. P. G. (CTS-9623450).
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Issue or Number:5
Record Number:CaltechAUTHORS:HWAprl97
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ID Code:4802
Deposited By: Archive Administrator
Deposited On:07 Sep 2006
Last Modified:08 Nov 2021 20:20

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