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Gas-Surface Dynamics and Profile Evolution during Etching of Silicon

Hwang, G. S. and Anderson, C. M. and Gordon, M. J. and Moore, T. A. and Minton, T. K. and Giapis, K. P. (1996) Gas-Surface Dynamics and Profile Evolution during Etching of Silicon. Physical Review Letters, 77 (14). pp. 3049-3052. ISSN 0031-9007. doi:10.1103/PhysRevLett.77.3049.

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Scattering of energetic F atoms on a fluorinated Si surface is studied by molecular beam methods. The energy transfer closely follows hard-sphere collision kinematics. Energy and angular distributions of unreacted F atoms suggest significant multiple-bounce scattering in addition to single-bounce scattering and trapping desorption. An empirical model of the atom-surface interaction dynamics is used in a Monte Carlo simulation of topography evolution during neutral beam etching of Si. Model predictions of profile phenomena are validated by experiments.

Item Type:Article
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Giapis, K. P.0000-0002-7393-298X
Additional Information:© 1996 The American Physical Society Received 2 May 1996 This work was supported by Sematech under Contract No. 75017492 and by the Ballistic Missile Defense Organization/ISTO. K. P. G. thanks the Camille and Henry Dreyfus Foundation for a New Faculty Award.
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Ballistic Missile Defense OrganizationUNSPECIFIED
Camille and Henry Dreyfus FoundationUNSPECIFIED
Issue or Number:14
Record Number:CaltechAUTHORS:HWAprl96
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:4803
Deposited By: Archive Administrator
Deposited On:07 Sep 2006
Last Modified:08 Nov 2021 20:20

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