Hwang, G. S. and Anderson, C. M. and Gordon, M. J. and Moore, T. A. and Minton, T. K. and Giapis, K. P. (1996) Gas-Surface Dynamics and Profile Evolution during Etching of Silicon. Physical Review Letters, 77 (14). pp. 3049-3052. ISSN 0031-9007. doi:10.1103/PhysRevLett.77.3049. https://resolver.caltech.edu/CaltechAUTHORS:HWAprl96
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Abstract
Scattering of energetic F atoms on a fluorinated Si surface is studied by molecular beam methods. The energy transfer closely follows hard-sphere collision kinematics. Energy and angular distributions of unreacted F atoms suggest significant multiple-bounce scattering in addition to single-bounce scattering and trapping desorption. An empirical model of the atom-surface interaction dynamics is used in a Monte Carlo simulation of topography evolution during neutral beam etching of Si. Model predictions of profile phenomena are validated by experiments.
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| Additional Information: | © 1996 The American Physical Society Received 2 May 1996 This work was supported by Sematech under Contract No. 75017492 and by the Ballistic Missile Defense Organization/ISTO. K. P. G. thanks the Camille and Henry Dreyfus Foundation for a New Faculty Award. | ||||||||
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| Issue or Number: | 14 | ||||||||
| DOI: | 10.1103/PhysRevLett.77.3049 | ||||||||
| Record Number: | CaltechAUTHORS:HWAprl96 | ||||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:HWAprl96 | ||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | ||||||||
| ID Code: | 4803 | ||||||||
| Collection: | CaltechAUTHORS | ||||||||
| Deposited By: | Archive Administrator | ||||||||
| Deposited On: | 07 Sep 2006 | ||||||||
| Last Modified: | 08 Nov 2021 20:20 |
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