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Aspect ratio independent etching of dielectrics

Hwang, Gyeong S. and Giapis, Konstantinos P. (1997) Aspect ratio independent etching of dielectrics. Applied Physics Letters, 71 (4). pp. 458-460. ISSN 0003-6951. doi:10.1063/1.119578.

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Monte Carlo simulations of pattern-dependent charging during oxide etching predict that the etch rate scaling with aspect ratio breaks down when surface discharge currents are significant. Under conditions of ion-limited etching and no inhibitor deposition, the etch depth depends on the maximum incident ion energy, reaction threshold, and surface discharge threshold, and is the same irrespective of the trench width (<= 0.5 µm).

Item Type:Article
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URLURL TypeDescription
Hwang, Gyeong S.0000-0002-5538-9426
Giapis, Konstantinos P.0000-0002-7393-298X
Additional Information:© 1997 American Institute of Physics. (Received 22 April 1997; accepted 27 May 1997) This material was based on work partially supported by an NSF Career Award to KPG (CTS-9623450).
Funding AgencyGrant Number
Subject Keywords:etching; Monte Carlo methods; surface discharges
Issue or Number:4
Record Number:CaltechAUTHORS:HWAapl97d
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:4809
Deposited By: Archive Administrator
Deposited On:07 Sep 2006
Last Modified:08 Nov 2021 20:20

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