A Caltech Library Service

Maskless etching of silicon using patterned microdischarges

Sankaran, R. M. and Giapis, K. P. (2001) Maskless etching of silicon using patterned microdischarges. Applied Physics Letters, 79 (5). pp. 593-595. ISSN 0003-6951. doi:10.1063/1.1388867.

PDF - Published Version
See Usage Policy.


Use this Persistent URL to link to this item:


Microdischarges in flexible copper-polyimide structures with hole diameters of 200 µm have been used as stencil masks to pattern bare silicon in CF4/Ar chemistry. The discharges were operated at 20 Torr using the substrate as the cathode, achieving etch rates greater than 7 µm/min. Optical emission spectroscopy provides evidence of excited fluorine atoms. The etch profiles show a peculiar shape attributed to plasma expansion into the etched void. Forming discharges in multiple hole and line shapes permits direct pattern transfer in silicon and could be an alternative to ultrasonic milling and laser drilling.

Item Type:Article
Related URLs:
URLURL TypeDescription
Giapis, K. P.0000-0002-7393-298X
Additional Information:© 2001 American Institute of Physics. Received: 18 April 2001; accepted: 6 June 2001. This material was based on work supported by NSF (ECS-9729968).
Funding AgencyGrant Number
Subject Keywords:silicon; sputter etching; plasma materials processing; elemental semiconductors; plasma diagnostics
Issue or Number:5
Record Number:CaltechAUTHORS:SANapl01
Persistent URL:
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:4859
Deposited By: Lindsay Cleary
Deposited On:11 Sep 2006
Last Modified:08 Nov 2021 20:20

Repository Staff Only: item control page