CaltechAUTHORS
  A Caltech Library Service

Maskless etching of silicon using patterned microdischarges

Sankaran, R. M. and Giapis, K. P. (2001) Maskless etching of silicon using patterned microdischarges. Applied Physics Letters, 79 (5). pp. 593-595. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:SANapl01

[img]
Preview
PDF - Published Version
See Usage Policy.

243Kb

Use this Persistent URL to link to this item: https://resolver.caltech.edu/CaltechAUTHORS:SANapl01

Abstract

Microdischarges in flexible copper-polyimide structures with hole diameters of 200 µm have been used as stencil masks to pattern bare silicon in CF4/Ar chemistry. The discharges were operated at 20 Torr using the substrate as the cathode, achieving etch rates greater than 7 µm/min. Optical emission spectroscopy provides evidence of excited fluorine atoms. The etch profiles show a peculiar shape attributed to plasma expansion into the etched void. Forming discharges in multiple hole and line shapes permits direct pattern transfer in silicon and could be an alternative to ultrasonic milling and laser drilling.


Item Type:Article
ORCID:
AuthorORCID
Giapis, K. P.0000-0002-7393-298X
Additional Information:© 2001 American Institute of Physics. Received: 18 April 2001; accepted: 6 June 2001. This material was based on work supported by NSF (ECS-9729968).
Funders:
Funding AgencyGrant Number
NSFECS-9729968
Subject Keywords:silicon; sputter etching; plasma materials processing; elemental semiconductors; plasma diagnostics
Issue or Number:5
Record Number:CaltechAUTHORS:SANapl01
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:SANapl01
Alternative URL:http://dx.doi.org/10.1063/1.1388867
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:4859
Collection:CaltechAUTHORS
Deposited By: Lindsay Cleary
Deposited On:11 Sep 2006
Last Modified:02 Oct 2019 23:17

Repository Staff Only: item control page