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Noise Measurements of Discrete HEMT Transistors and Application to Wideband Very Low-Noise Amplifiers

Akgiray, Ahmed H. and Weinreb, Sander and Leblanc, Rémy and Renvoise, Michel and Frijlink, Peter and Lai, Richard and Sarkozy, Stephen (2013) Noise Measurements of Discrete HEMT Transistors and Application to Wideband Very Low-Noise Amplifiers. IEEE Transactions on Microwave Theory and Techniques, 61 (9). pp. 3285-3297. ISSN 0018-9480. http://resolver.caltech.edu/CaltechAUTHORS:20140826-135935392

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Abstract

The noise models of InP and GaAs HEMTs are compared with measurements at both 300 and 20 K. The critical parameter, T_(drain), in the Pospieszalski noise model is determined as a function of drain current by measurements of the 1-GHz noise of discrete transistors with 50-Ω generator impedance. The dc I-V for the transistors under test are presented and effects of impact-ionization are noted. InP devices with both 100% and 75% indium mole fraction in channel are included. Examples of the design and measurement of very wideband low-noise amplifiers (LNAs) using the tested transistors are presented. At 20-K physical temperature the GaAs LNA achieves <10-K noise over the 0.7-16-GHz range with 16 mW of power and an InP LNA measures <20-K noise over the 6-50-GHz range with 30 mW of power.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1109/TMTT.2013.2273757 DOIArticle
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6566114PublisherArticle
Additional Information:© 2013 IEEE. Manuscript received January 29, 2013; revised June 18, 2013; accepted June 20, 2013. Date of publication July 23, 2013; date of current version August 30, 2013. The authors would like to express their deep gratitude to S. Smith, California Institute of Technology, Pasadena, CA, USA, for the many helpful discussions, and to H. Navarette, also with the California Institute of Technology, for his help in assembly of the packaged MMICs and discrete devices.
Subject Keywords:Broadband amplifiers; cryogenics; gallium-arsenide (GaAs); indium-phosphide (InP); low-noise amplifiers (LNAs); microwave amplifiers; monolithic microwave integrated circuits (MMICs); radio astronomy
Record Number:CaltechAUTHORS:20140826-135935392
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20140826-135935392
Official Citation:Akgiray, AH.; Weinreb, S.; LeBlanc, R.; Renvoise, M.; Frijlink, P.; Lai, R.; Sarkozy, S., "Noise Measurements of Discrete HEMT Transistors and Application to Wideband Very Low-Noise Amplifiers," Microwave Theory and Techniques, IEEE Transactions on , vol.61, no.9, pp.3285,3297, Sept. 2013 doi: 10.1109/TMTT.2013.2273757 URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6566114&isnumber=6588343
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:48934
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:26 Aug 2014 21:18
Last Modified:26 Aug 2014 21:18

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