A Caltech Library Service

Cyclic fatigue of reaction-bonded silicon nitride at elevated temperatures

Christensen, R. J. and Faber, K. T. (1997) Cyclic fatigue of reaction-bonded silicon nitride at elevated temperatures. Journal of Materials Science, 32 (4). pp. 949-955. ISSN 0022-2461. doi:10.1023/A:1018509902025.

Full text is not posted in this repository. Consult Related URLs below.

Use this Persistent URL to link to this item:


Cyclic and static loading tests were performed on reaction-bonded silicon nitride from 1000–1400 °C in air. This porous, fine-grained material contained no glassy grain-boundary phase and exhibited no slow crack growth at room temperature. Under cyclic loading, the crack-growth behaviour at 1000 °C was similar to room-temperature results; however, at 1200 and 1400 °C crack-growth rates increased significantly. Under static loading, significant crack growth was detected at 1000 °C and increased with temperature. Most of the crack growth under cyclic loading was attributed to slow crack-growth mechanisms, but evidence of cyclic crack-growth mechanisms were also observed. Oxidation played a major role in crack-growth velocity at high temperature.

Item Type:Article
Related URLs:
URLURL TypeDescription
Faber, K. T.0000-0001-6585-2536
Additional Information:© 1997 Chapman & Hall. Received 23 February and accepted 31 July 1996. The authors gratefully acknowledge NIST for the funding support through the Program for Integrated Design, NDE, and Manufacturing Sciences.
Funding AgencyGrant Number
National Institute of Standards and Technology (NIST)UNSPECIFIED
Issue or Number:4
Record Number:CaltechAUTHORS:20140908-181326057
Persistent URL:
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:49415
Deposited By: George Porter
Deposited On:09 Sep 2014 20:52
Last Modified:10 Nov 2021 18:43

Repository Staff Only: item control page