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Cyclic fatigue of reaction-bonded silicon nitride at elevated temperatures

Christensen, R. J. and Faber, K. T. (1997) Cyclic fatigue of reaction-bonded silicon nitride at elevated temperatures. Journal of Materials Science, 32 (4). pp. 949-955. ISSN 0022-2461. https://resolver.caltech.edu/CaltechAUTHORS:20140908-181326057

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Abstract

Cyclic and static loading tests were performed on reaction-bonded silicon nitride from 1000–1400 °C in air. This porous, fine-grained material contained no glassy grain-boundary phase and exhibited no slow crack growth at room temperature. Under cyclic loading, the crack-growth behaviour at 1000 °C was similar to room-temperature results; however, at 1200 and 1400 °C crack-growth rates increased significantly. Under static loading, significant crack growth was detected at 1000 °C and increased with temperature. Most of the crack growth under cyclic loading was attributed to slow crack-growth mechanisms, but evidence of cyclic crack-growth mechanisms were also observed. Oxidation played a major role in crack-growth velocity at high temperature.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1023/A:1018509902025DOIArticle
http://link.springer.com/article/10.1023%2FA%3A1018509902025PublisherArticle
ORCID:
AuthorORCID
Faber, K. T.0000-0001-6585-2536
Additional Information:© 1997 Chapman & Hall. Received 23 February and accepted 31 July 1996. The authors gratefully acknowledge NIST for the funding support through the Program for Integrated Design, NDE, and Manufacturing Sciences.
Funders:
Funding AgencyGrant Number
National Institute of Standards and Technology (NIST)UNSPECIFIED
Issue or Number:4
Record Number:CaltechAUTHORS:20140908-181326057
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20140908-181326057
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:49415
Collection:CaltechAUTHORS
Deposited By: George Porter
Deposited On:09 Sep 2014 20:52
Last Modified:03 Mar 2020 13:01

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