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Dislocation structures in In-doped and undoped GaAs deformed at 700-1100°C

Rai, R. S. and Guruswamy, S. and Faber, K. T. and Hirth, J. P. (1989) Dislocation structures in In-doped and undoped GaAs deformed at 700-1100°C. Philosophical Magazine A, 60 (3). pp. 339-353. doi:10.1080/01418618908213866. https://resolver.caltech.edu/CaltechAUTHORS:20140908-181330183

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Abstract

Dislocation structures in In-doped and undoped GaAs single crystals deformed at 700-1100°C have been studied by transmission electron microscopy. The results for (Ga, In)As, similar to earlier findings for Si and Ge, provide the basis for a proposed model for recovery processes. The observed structures together with their mechanical properties indicate that the role of In is consistent with an athermal contribution to the frictional stress arising from a solid-solution-hardening effect.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1080/01418618908213866DOIArticle
http://www.tandfonline.com/doi/abs/10.1080/01418618908213866PublisherArticle
ORCID:
AuthorORCID
Faber, K. T.0000-0001-6585-2536
Additional Information:© 1989 Taylor & Francis. [Received 9 June 1988 and accepted 31 October 1988] The authors are grateful for the support of this work by the Defense Advance Research Project Agency (DARPA) (U.S. Department of Defense), Order 5526, monitored by the U.S. Air Force Office of Scientific Research under Contract F49620-85-C-0129, and for the provision of materials for this research by Dr Shaun McGuigan of Materials Growth and Device Technology Group, Westinghouse R&D Center under contract N00014-84-C-0632 with DARPA.
Funders:
Funding AgencyGrant Number
Defense Advanced Research Projects Agency (DARPA)5526
Air Force Office of Scientific Research (AFOSR)F49620-85-C-0129
Defense Advanced Research Projects Agency (DARPA)N00014-84-C-0632
Issue or Number:3
DOI:10.1080/01418618908213866
Record Number:CaltechAUTHORS:20140908-181330183
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20140908-181330183
Official Citation:Dislocation structures in In-doped and undoped GaAs deformed at 700-1100°C R. S. Rai, S. Guruswamy, K. T. Faber, J. P. Hirth Philosophical Magazine A Vol. 60, Iss. 3, 1989
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:49447
Collection:CaltechAUTHORS
Deposited By: George Porter
Deposited On:11 Sep 2014 18:21
Last Modified:10 Nov 2021 18:44

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