Guruswamy, S. and Rai, R. S. and Faber, K. T. and Hirth, J. P. and Clemans, J. E. and McGuigan, S. and Thomas, R. N. and Mitchel, W. (1989) Influence of solute doping on the high-temperature deformation behavior of GaAs. Journal of Applied Physics, 65 (6). pp. 2508-2512. ISSN 0021-8979. doi:10.1063/1.342797. https://resolver.caltech.edu/CaltechAUTHORS:20140908-181330279
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Abstract
The role of isovalent dopants in the high‐temperature deformation of GaAs has been studied in the temperature range 500–1150 °C. Additions of In, Sb, and B increase the critical resolved shear stress for deformation at a given strain rate and result in lowering the dislocation density of as‐grown liquid‐encapsulated Czochralski GaAs crystals. Phosphorus, because of its minor influence on the lattice strain, shows little enhancement of the yield stress. These results are consistent with a solute hardening model, in which the solute atom surrounded tetrahedrally by four Ga or As atoms comprise the hardening cluster. Codoping with In and Si hardens GaAs, but codoping with Si is less effective than the isovalent solutes In, Sb, and B, and produces softening at high temperatures. The effect of solutes on both dislocation nucleation and multiplication are reviewed here.
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| Additional Information: | © 1989 American Institute of Physics. (Received 31 August 1988; accepted for publication 16 November 1988). The authors are grateful for the support of this work by the Defense Advanced Research Projects Agency (DoD), Order No. 5526, monitored by AFOSR under Contract No. F49620-85-C-0129. | |||||||||
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| Issue or Number: | 6 | |||||||||
| DOI: | 10.1063/1.342797 | |||||||||
| Record Number: | CaltechAUTHORS:20140908-181330279 | |||||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20140908-181330279 | |||||||||
| Official Citation: | Influence of solute doping on the high‐temperature deformation behavior of GaAs Guruswamy, S. and Rai, R. S. and Faber, K. T. and Hirth, J. P. and Clemans, J. E and McGuigan, S. and Thomas, R. N. and Mitchel, W., Journal of Applied Physics, 65, 2508-2512 (1989), DOI:http://dx.doi.org/10.1063/1.342797 | |||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
| ID Code: | 49448 | |||||||||
| Collection: | CaltechAUTHORS | |||||||||
| Deposited By: | George Porter | |||||||||
| Deposited On: | 10 Sep 2014 15:05 | |||||||||
| Last Modified: | 10 Nov 2021 18:44 |
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