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Influence of solute doping on the high-temperature deformation behavior of GaAs

Guruswamy, S. and Rai, R. S. and Faber, K. T. and Hirth, J. P. and Clemans, J. E. and McGuigan, S. and Thomas, R. N. and Mitchel, W. (1989) Influence of solute doping on the high-temperature deformation behavior of GaAs. Journal of Applied Physics, 65 (6). pp. 2508-2512. ISSN 0021-8979. http://resolver.caltech.edu/CaltechAUTHORS:20140908-181330279

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Abstract

The role of isovalent dopants in the high‐temperature deformation of GaAs has been studied in the temperature range 500–1150 °C. Additions of In, Sb, and B increase the critical resolved shear stress for deformation at a given strain rate and result in lowering the dislocation density of as‐grown liquid‐encapsulated Czochralski GaAs crystals. Phosphorus, because of its minor influence on the lattice strain, shows little enhancement of the yield stress. These results are consistent with a solute hardening model, in which the solute atom surrounded tetrahedrally by four Ga or As atoms comprise the hardening cluster. Codoping with In and Si hardens GaAs, but codoping with Si is less effective than the isovalent solutes In, Sb, and B, and produces softening at high temperatures. The effect of solutes on both dislocation nucleation and multiplication are reviewed here.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1063/1.342797DOIArticle
http://scitation.aip.org/content/aip/journal/jap/65/6/10.1063/1.342797PublisherArticle
Additional Information:© 1989 American Institute of Physics. (Received 31 August 1988; accepted for publication 16 November 1988). The authors are grateful for the support of this work by the Defense Advanced Research Projects Agency (DoD), Order No. 5526, monitored by AFOSR under Contract No. F49620-85-C-0129.
Funders:
Funding AgencyGrant Number
Defense Advanced Research Projects Agency (DARPA)5526
Air Force Office of Scientific Research (AFOSR)F49620-85-C-0129
Record Number:CaltechAUTHORS:20140908-181330279
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20140908-181330279
Official Citation:Influence of solute doping on the high‐temperature deformation behavior of GaAs Guruswamy, S. and Rai, R. S. and Faber, K. T. and Hirth, J. P. and Clemans, J. E and McGuigan, S. and Thomas, R. N. and Mitchel, W., Journal of Applied Physics, 65, 2508-2512 (1989), DOI:http://dx.doi.org/10.1063/1.342797
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:49448
Collection:CaltechAUTHORS
Deposited By: George Porter
Deposited On:10 Sep 2014 15:05
Last Modified:10 Sep 2014 15:05

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