CaltechAUTHORS
  A Caltech Library Service

Deformation behavior of undoped and In-doped GaAs in the temperature range 700–1100 °C

Guruswamy, S. and Rai, R. S. and Faber, K. T. and Hirth, J. P. (1987) Deformation behavior of undoped and In-doped GaAs in the temperature range 700–1100 °C. Journal of Applied Physics, 62 (10). pp. 4130-4134. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:20140908-181330496

[img]
Preview
PDF - Published Version
See Usage Policy.

613kB

Use this Persistent URL to link to this item: https://resolver.caltech.edu/CaltechAUTHORS:20140908-181330496

Abstract

Compressive deformation of undoped and In‐doped GaAs single crystals has been carried out in [001] and [123] orientations in the temperature range 700–1100 °C. Indium additions, at levels of 1–2×10^(20) atoms cm^(−3), result in critical resolved shear stress (CRSS) values that are about twice as large as the undoped crystals in the temperature range of 700–1100 °C. The CRSS was weakly dependent on temperature in the temperature range investigated as expected for a model of athermal solid solution hardening. The CRSS value of 3.3 MPa for the In‐doped crystal is sufficient to eliminate profuse dislocation formation in a 75‐mm‐diam crystal on the basis of current theories for the magnitude of the thermal stress experienced during growth. The results also suggest that the process of dislocation climb is slowed appreciably by In doping.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1063/1.339129DOIArticle
http://scitation.aip.org/content/aip/journal/jap/62/10/10.1063/1.339129PublisherArticle
ORCID:
AuthorORCID
Faber, K. T.0000-0001-6585-2536
Additional Information:© 1987 American Institute of Physics. (Received 26 May 1987; accepted for publication 11 August 1987). The authors are grateful for the support of this work by the Defence Advanced Research Projects Agency (DOD), Order No. 5526, monitored by AFOSR under Contract No. F49620-85-C-0129, and for the provision of materials for this research by Dr. Shaun McGuigin of the Materials Growth and Device Technology Group, Westinghouse R&D Center under their contract with DARPA, No. N00014-84-C-0632.
Funders:
Funding AgencyGrant Number
Defense Advanced Research Projects Agency (DARPA)5526
Air Force Office of Scientific Research (AFOSR)F49620-85-C-0129
Office of Naval Research (ONR)N00014-84-C-0632
Issue or Number:10
Record Number:CaltechAUTHORS:20140908-181330496
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20140908-181330496
Official Citation:Deformation behavior of undoped and In‐doped GaAs in the temperature range 700–1100 °C Guruswamy, S. and Rai, R. S. and Faber, K. T. and Hirth, J. P., Journal of Applied Physics, 62, 4130-4134 (1987), DOI:http://dx.doi.org/10.1063/1.339129
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:49450
Collection:CaltechAUTHORS
Deposited By: George Porter
Deposited On:10 Sep 2014 14:41
Last Modified:03 Mar 2020 13:01

Repository Staff Only: item control page