Guruswamy, S. and Rai, R. S. and Faber, K. T. and Hirth, J. P. (1987) Deformation behavior of undoped and In-doped GaAs in the temperature range 700–1100 °C. Journal of Applied Physics, 62 (10). pp. 4130-4134. ISSN 0021-8979. doi:10.1063/1.339129. https://resolver.caltech.edu/CaltechAUTHORS:20140908-181330496
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Abstract
Compressive deformation of undoped and In‐doped GaAs single crystals has been carried out in [001] and [123] orientations in the temperature range 700–1100 °C. Indium additions, at levels of 1–2×10^(20) atoms cm^(−3), result in critical resolved shear stress (CRSS) values that are about twice as large as the undoped crystals in the temperature range of 700–1100 °C. The CRSS was weakly dependent on temperature in the temperature range investigated as expected for a model of athermal solid solution hardening. The CRSS value of 3.3 MPa for the In‐doped crystal is sufficient to eliminate profuse dislocation formation in a 75‐mm‐diam crystal on the basis of current theories for the magnitude of the thermal stress experienced during growth. The results also suggest that the process of dislocation climb is slowed appreciably by In doping.
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| Additional Information: | © 1987 American Institute of Physics. (Received 26 May 1987; accepted for publication 11 August 1987). The authors are grateful for the support of this work by the Defence Advanced Research Projects Agency (DOD), Order No. 5526, monitored by AFOSR under Contract No. F49620-85-C-0129, and for the provision of materials for this research by Dr. Shaun McGuigin of the Materials Growth and Device Technology Group, Westinghouse R&D Center under their contract with DARPA, No. N00014-84-C-0632. | |||||||||
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| Issue or Number: | 10 | |||||||||
| DOI: | 10.1063/1.339129 | |||||||||
| Record Number: | CaltechAUTHORS:20140908-181330496 | |||||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20140908-181330496 | |||||||||
| Official Citation: | Deformation behavior of undoped and In‐doped GaAs in the temperature range 700–1100 °C Guruswamy, S. and Rai, R. S. and Faber, K. T. and Hirth, J. P., Journal of Applied Physics, 62, 4130-4134 (1987), DOI:http://dx.doi.org/10.1063/1.339129 | |||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
| ID Code: | 49450 | |||||||||
| Collection: | CaltechAUTHORS | |||||||||
| Deposited By: | George Porter | |||||||||
| Deposited On: | 10 Sep 2014 14:41 | |||||||||
| Last Modified: | 10 Nov 2021 18:44 |
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