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High-temperature hardness of Ga_(1−x)In_xAs

Guruswamy, S. and Hirth, J. P. and Faber, K. T. (1986) High-temperature hardness of Ga_(1−x)In_xAs. Journal of Applied Physics, 60 (12). pp. 4136-4140. ISSN 0021-8979. doi:10.1063/1.337495.

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Substantial solid‐solution strengthening of GaAs by In acting as InAs_4 units has recently been predicted for an intermediate‐temperature plateau region. This strengthening could account, in part, for the reduction of dislocation density in GaAs single crystals grown from the melt. Hardness measurements at high temperatures up to 900 °C have been carried out on (100) GaAs, Ga_(0.9975)In_(0.0025)As, and Ga_(0.99)In_(0.01)As wafers, all of which contain small amounts of boron. Results show a significant strengthening effect in In‐doped GaAs. A nominally temperature‐independent flow‐stress region is observed for all three alloys. The In‐doped GaAs shows a higher plateau stress level with increasing In content. The results are consistent with the solid‐solution strengthening model. The magnitude of the solid‐solution hardening is sufficient to explain the reduction in dislocation density with In addition.

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Faber, K. T.0000-0001-6585-2536
Alternate Title:High‐temperature hardness of Ga1−xInxAs
Additional Information:© 1986 American Institute of Physics. (Received 27 May 1986; accepted for publication 15 August 1986). The authors are grateful for the support of this work by the Defense Advanced Research Projects Agency (DOD), DARPA Order No. 5526, monitored by AFOSR under Contract No. F49620-85-C-0129, and for the help of R.N. Thomas and other members of the Devices Group at the Westinghouse R&D Center, for providing materials for this research under their contract with DARPA, No. DARPA-Westinghouse- N-00014-84-C-0632, as well as for contributing helpful discussions.
Funding AgencyGrant Number
Defense Advanced Research Projects Agency (DARPA)5526
Air Force Office of Scientific Research (AFOSR)F49620-85-C-0129
Office of Naval Research (ONR)N-00014-84-C-0632
Issue or Number:12
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Official Citation:High‐temperature hardness of Ga1−xInxAs Guruswamy, S. and Hirth, J. P. and Faber, K. T., Journal of Applied Physics, 60, 4136-4140 (1986), DOI:
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:49453
Deposited By: George Porter
Deposited On:10 Sep 2014 03:39
Last Modified:10 Nov 2021 18:44

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