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TEM Studies of Dislocations in Deformed Ga_(x)In_(1-x)As Single Crystals

Rai, R. S. and Faber, K. T. and Guruswamy, S. and Hirth, J. P. (1987) TEM Studies of Dislocations in Deformed Ga_(x)In_(1-x)As Single Crystals. In: Proceedings of the 45th Annual Meeting of the Electron Microscopy Society of America. San Francisco Press , San Francisco, CA, pp. 320-321.

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The control of dislocation density during the growth of GaAs and related compounds is highly desirable for obtaining improved performance and reliability of opto-electronic devices. Doping of single crystal GaAs grown by the LEC process with Indium has been known to reduce the dislocation density significantly. Substitutional solid-solution strengthening of GaAs as an InAs unit been suggested to be responsible for reduction of dislocation density. To understand the mechanism involved in dislocation density reduction deformation tests have been performed on [001] oriented Ga_XIn_(1-x)As single crystals in the temperature range 700-1100°C and this paper reports some results of the TEM characterization of dislocations in these deformed single crystals.

Item Type:Book Section
Faber, K. T.0000-0001-6585-2536
Additional Information:Copyright © 1987 by San Francisco Press. This work was supported by DARPA Order No. 5526, monitored by AFOSR under Contract No. F49620-85-C-0129 and the materials were supplied by Westinghouse R&D Center under their contract with DARPA, No. DARPA-Westinghouse-N-0014-84-C-0632.
Funding AgencyGrant Number
Defense Advanced Research Projects Agency (DARPA)5526
Air Force Office of Scientific Research (AFOSR)F49620-85-C-0129
Office of Naval Research (ONR)N-00014-84-C-0632
Record Number:CaltechAUTHORS:20140915-114401795
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:49707
Deposited By: George Porter
Deposited On:15 Sep 2014 20:21
Last Modified:03 Mar 2020 13:01

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