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Experimental measurement of lateral transport in the inversion layer of silicon heterojunction solar cells

Emmer, Hal S. and Deceglie, Michael G. and Holman, Zachary C. and Descoeudres, Antoine and De Wolf, Stefaan and Ballif, Christophe and Atwater, Harry A. (2013) Experimental measurement of lateral transport in the inversion layer of silicon heterojunction solar cells. In: IEEE 39th Photovoltaic Specialists Conference. IEEE , Piscataway, NJ, pp. 1229-1231. ISBN 978-1-4799-3299-3. http://resolver.caltech.edu/CaltechAUTHORS:20140918-101058629

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Abstract

We performed two experiments to measure lateral flow of photoexcited charge carriers near the heterointerface in silicon heterojunction (SHJ) solar cells. Using light beam methods, we probed current extraction differences between areas of varying intrinsic layer thickness and the effective cross section of junction defects. Both measurements demonstrated a strong bias voltage dependence of lateral transport and transport lengths of tens to hundreds of microns as bias approached operating voltages. Lateral carrier flow near the heterointerface is proposed as one of the reasons that SHJ solar cells are extremely sensitive to interfacial defects.


Item Type:Book Section
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1109/PVSC.2013.6744362 DOIArticle
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6744362PublisherArticle
ORCID:
AuthorORCID
De Wolf, Stefaan0000-0003-1619-9061
Ballif, Christophe0000-0001-8989-0545
Atwater, Harry A.0000-0001-9435-0201
Additional Information:© 2013 IEEE. This material is based upon work supported in part by the National Science Foundation (NSF) and the Department of Energy (DOE) under NSF CA No. EEC-1041895. Any opinions, findings and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect those of NSF or DOE. Z.C.H, A.D., S.D.W., and C.B. acknowledge support from the European Union Seventh Framework Programme, Axpo Naturstrom Fonds, and the Swiss Commission for Technology and Innovation. We gratefully acknowledge critical support and infrastructure provided for this work by the Kavli Nanoscience Institute at Caltech.
Group:Kavli Nanoscience Institute
Funders:
Funding AgencyGrant Number
Department of Energy (DOE)UNSPECIFIED
NSFEEC-1041895
European Union Union Seventh Framework ProgrammeUNSPECIFIED
Axpo Naturstrom FondsUNSPECIFIED
Swiss Commission for Technology and InnovationUNSPECIFIED
Subject Keywords:heterojunctions, photovoltaic cells, silicon
Record Number:CaltechAUTHORS:20140918-101058629
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20140918-101058629
Official Citation:Emmer, H.S.; Deceglie, M.G.; Holman, Z.C.; Descoeudres, A; De Wolf, S.; Ballif, C.; Atwater, H.A, "Experimental measurement of lateral transport in the inversion layer of silicon heterojunction solar cells," Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th , vol., no., pp.1229,1231, 16-21 June 2013 doi: 10.1109/PVSC.2013.6744362 URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6744362&isnumber=6744078
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:49812
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:18 Sep 2014 22:27
Last Modified:27 Apr 2017 18:04

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