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Photoresist-free printing of amorphous silicon thin-film transistors

Miller, Scott M. and Troian, Sandra M. and Wagner, Sigurd (2003) Photoresist-free printing of amorphous silicon thin-film transistors. Applied Physics Letters, 83 (15). pp. 3207-3209. ISSN 0003-6951. doi:10.1063/1.1618364.

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Conventional fabrication of amorphous silicon thin-film transistors (a-Si TFTs) requires patterning numerous photoresist layers, a subtractive process that is time consuming and expensive. This letter describes transistor fabrication by a photoresist-free approach in which polymer etch masks are letterpress printed from flexible polyimide stamps. Pattern registration is achieved through optical alignment since the printed masks are thin and optically transparent. This modified fabrication scheme produces transistor performance equivalent to conventionally fabricated a-Si TFTs. The ability to directly print etch masks onto nonhomogeneous substrates brings one step closer the realization of flexible, large-area, macroelectronic fabrication.

Item Type:Article
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Miller, Scott M.0000-0001-8462-1063
Troian, Sandra M.0000-0003-1224-6377
Additional Information:©2003 American Institute of Physics. (Received 26 June 2003; accepted 16 August 2003) The authors gratefully acknowledge support from the DARPA Molecular Level Printing Program, the New Jersey Commission on Science and Technology, the US Army TACOM-ARDEC, and the Eastman Kodak Corporation through a graduate fellowship for one of the authors (S.M.M.).
Subject Keywords:silicon; elemental semiconductors; amorphous semiconductors; thin film transistors; printing; masks
Issue or Number:15
Record Number:CaltechAUTHORS:MILapl03
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:4983
Deposited By: Archive Administrator
Deposited On:18 Sep 2006
Last Modified:08 Nov 2021 20:21

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