Bai, G. and Nicolet, M-A. and Mahan, John E. and Geib, Kent M. and Robinson, Gary Y. (1990) Radiation damage in ReSi2 by a MeV 4He beam. Applied Physics Letters, 57 (16). pp. 1657-1659. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:BAIapl90
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Abstract
Epitaxial ReSi2 thin films grown on Si (100) substrates were analyzed at room temperature by MeV 4He backscattering and channeling spectrometry. The minimum yield of [100] axial channeling increases with increasing exposure of the ReSi2 sample to the analyzing He beam. This means that ReSi2 suffers irradiation damage induced by a MeV 4He beam. The damage in the film induced by a beam incident along a random direction is about one order of magnitude larger than that induced by a beam with an aligned incidence, indicating that the damage is mainly generated by elastic collisions of nuclei. The experimentally measured defect concentration produced at 300 K by a beam of random incidence is compared with the theoretically estimated one produced at 0 K in an amorphous target. The agreement is fairly good, suggesting that the defects are stable at room temperature.
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| Additional Information: | Copyright © 1990 American Institute of Physics (Received 17 May 1990; accepted 16 August 1990) This letter is based upon work supported in part by the Semiconductor Research Corporation under contract No. 100-SJ-89 and by the National Science Foundation under grant No. DMR-8811795 at Caltech, by the US Army Research Office and the National Science Foundation through grant No. ECS-8514842 at Colorado State University and by the National Aeronautics and Space Administration through a Small Business Innovation Research contract with the Colorado Research Development Corporation. The authors gratefully acknowledge this support. | ||||||
| Subject Keywords: | RHENIUM SILICIDES; MEV RANGE 01–10; HELIUM IONS; ION CHANNELING; DAMAGE; PHYSICAL RADIATION EFFECTS; SILICON; MEDIUM TEMPERATURE; ULTRALOW TEMPERATURE; EXPERIMENTAL DATA; ELASTIC SCATTERING; BACKSCATTERING | ||||||
| Issue or Number: | 16 | ||||||
| Record Number: | CaltechAUTHORS:BAIapl90 | ||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:BAIapl90 | ||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | ||||||
| ID Code: | 5025 | ||||||
| Collection: | CaltechAUTHORS | ||||||
| Deposited By: | Archive Administrator | ||||||
| Deposited On: | 20 Sep 2006 | ||||||
| Last Modified: | 02 Oct 2019 23:18 |
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